THGBM1G6D4EBAI4 Toshiba, THGBM1G6D4EBAI4 Datasheet

THGBM1G6D4EBAI4

Manufacturer Part Number

THGBM1G6D4EBAI4

Description

Manufacturer

Toshiba

Datasheet

1.THGBM1G6D4EBAI4.pdf (1 pages)

Specifications of THGBM1G6D4EBAI4

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New s/Media Resources

IRVINE, Calif., and TOKYO, August 7, 2008 —

Toshiba Corp. (Toshiba) and Toshiba America Electronic

Components, Inc. (TAEC)*, its subsidiary in the

Americas, today announced the launch of 32GB

embedded NAND flash memory devices that offer the

largest density yet announced

the eMMC™ and eSD™ standards. The embedded

devices are designed for application in digital consumer

products, including mobile phones, video cameras,

HDTV, personal navigation devices, POS terminals,

printers, and set-top boxes. Samples w ill be available in

September 2008, and mass production w ill start in the

fourth quarter.

The new 32GB embedded devices combine eight 32Gbit

(= 4GB) NAND chips fabricated w ith Toshiba's cutting-

edge 43nm process technology and also integrate a

dedicated controller. Full compliance w ith JEDEC/MMCA Ver. 4.3 and SDA Ver. 2.0 high-speed memory

standards for memory cards as defined by the MultiMediaCard Association and SD Card Association,

respectively, supports standard interfacing and simplified embedding in products, reducing development

burdens on product manufacturers.

Toshiba offers a line-up of single-package embedded NAND Flash memories w hich include a controller to

manage basic control functions for NAND applications: LBA-NAND™ memory, w hich has a NAND interface;

eSD large capacity chips w ith SD interface; and e MMC w ith an HS-MMC interface. This comprehensive line-

up, available in densities ranging from 1GB to 32GB, supports applications in a very w ide range of products.

There is grow ing demand for memories w ith a controller function that minimizes development requirements

and eases integration into system designs. Toshiba has already taken steps to secure leadership in this

expanding market, and the addition of higher density modules w ill reinforce the company's position.

New Product Lineup:

eMMC

eSD

Key Features

Specifications eMMC

**Available only for THGBM1G8D8EBAI2 and THGBM1G7D4ERBAI2

Specifications eSD

*About Toshiba Corp. and TAEC

Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba

enables its customers to create market-leading designs. Toshiba is the heartbeat w ithin product

breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies w orldw ide. A committed

electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage

solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital

multimedia and imaging products, microcontrollers and w ireless components that make possible today's

leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.

Toshiba America Electronic Components, Inc. is an independent operating company ow ned by Toshiba

America, Inc., a subsidiary of Toshiba Corporation, Japan 's largest semiconductor manufacturer and the

w orld's third largest semiconductor manufacturer ( Gartner, 2007 WW Semiconductor Revenue, April 2008).

For additional company and product information, please visit

1,073,741,824 bytes. Usable capacity may be less. For details, please refer to specifications.

Inform ation in this press release, including product pricing and specifications, content of

services and contact inform ation, is current and believed to be accurate on the date of the

announcem ent, but is subject to change w ithout prior notice. Technical and application

inform ation contained here is subject to the m ost recent applicable Toshiba product

specifications. In developing designs, please ensure that Toshiba products are used w ithin

specified operating ranges as set forth in the m ost recent Toshiba product specifications and

the inform ation set forth in Toshiba’s "Handling Guide for Sem iconductor Devices," or "Toshiba

Sem iconductor Reliability Handbook." This inform ation is available at

your TAEC representative.

eM M C is a trademark of the M ultiM ediaCard Association. LBA-NAND and eSD are trademarks of

TOSHIBA Corporation All other trademarks and tradenames held within are the properties of

their respective holders.

MEMY 08 536

eMMC and eSD Embedded Memories Combine Up To 32GB NAND and Controller in a Single

As of the date of this announcement.

For purposes of measuring data transfer rate in this context, 1 kilobit = 1,000 bits.

HD and SD video are calculated at mean bit rates of 17 Mbps and 9 Mbps, respectively.

TOSHIBA LAUNCHES LARGEST DENSITY EMBEDDED NAND FLASH MEMORY

Product Num ber

THGBM1G8D8EBAI2

THGBM1G7D8EBAI0

THGBM1G7D4EBAI2

THGBM1G6D4EBAI4

THGBM1G5D2EBAI7

THGBM1G4D1EBAI7

THGBM1G3D1EBAI8

Product Num ber

THGVS4G8D8EBAI2

THGVS4G7D8EBAI0

THGVS4G7D4EBAI2

THGVS4G6D4EBAI4

THGVS4G5D2EBAI4

THGVS4G4D1EBAI4

THGVS4G3D1EBAI8

Interface

Pow er Supply Voltage

Bus w idth

Writing Speed

Reading Speed

Tem perature

Package

Interface

Pow er Supply Voltage

Bus w idth

Writing Speed

Reading Speed

Tem perature

Package

When used herein in relation to memory density, gigabyte and/or GB means 1,024x1,024x1,024 =

The integrated controller, compliant w ith JEDEC/MMCA Ver. 4.3 and SDA Ver. 2.0, handles essential

functions, including w riting block management, error correction (ECC) and driver softw are. It

simplifies system development, allow ing manufacturers to minimize development costs and to improve

time to market for new and upgraded products.

A w ide product line-up supports capacities from 1 to 32GB. The high-capacity 32GB device can

record up to 560 hours of data at a bit rate of 128Kbps

definition video and 7.3 hours of standard definition video 4.

The 32GB device stacks eight 32Gbit (=4GB) chips fabricated w ith leading-edge 43nm process

technology.

SEM Photograph of 32GB device structure

Photo Gallery

plus full compliance w ith

Capacity Package

32GB

16GB

8GB

4GB

2GB

1GB

Capacity Package

32GB

16GB

8GB

4GB

2GB

1GB

SDA Ver. 2.0 standard SD interface

2.7 to 3.6V

x1 / x4

SDA Standard Class 4

SDA standard Class 4

-25 degrees to +85 degrees Celsius

153Ball FBGA (+16 support Ball)

JEDEC/MMCA Ver. 4.3 standard HS-MMC interface

2.7 to 3.6V(memory core)/ 1.7V to 1.95V (interface)

x1 / x4 / x8

Target 10 MB per sec/ minimum (Sequential Mode)

Target 18 MB per sec/ minimum (Sequential/Interleave

Mode)**

Target 20 MB per sec/minimum (Sequential Mode)

-25 degrees to +85 degrees Celsius

153Ball FBGA (+16 support Ball)

169Ball FBGA

14x18x1.4mm

169Ball FBGA

12x18x1.4mm

169Ball FBGA

14x18x1.4mm

169Ball FBGA

12x18x1.3mm

169Ball FBGA

12x16x1.3mm

169Ball FBGA

12x16x1.3mm

169Ball FBGA

11.5x13x1.2mm

169Ball FBGA

14x18x1.4mm

169Ball FBGA

12x18x1.4mm

169Ball FBGA

14x18x1.4mm

169Ball FBGA

12x18x1.3mm

169Ball FBGA

12x18x1.3mm

169Ball FBGA

12x18x1.3mm

169Ball FBGA

11.5x13x1.2mm

DEVICES

Package

http://w w w

and can record

Dow nload Hi Res Image (JPG 915KB)

Sam ple

Shipm ent

Oct., 08

Sept., 08

4Q, 08

(Oct.~Dec.)

Sept., 08

4Q, 08

(Oct.~Dec.)

4Q, 08

(Oct.~Dec.)

Sam ple

Shipm ent

Sept., 08

4Q, 08

(Oct.~Dec.)

Sept., 08

4Q, 08

(Oct.~Dec.)

4Q, 08

(Oct.~Dec.)

1Q, 09

(Jan. –

Mar.)

.toshiba.com/taec/.

chips.toshiba.com

hours of full spec high

Mass

Production

4Q, 08

(Oct.~Dec.)

4Q, 08

(Oct.~Dec.)

4Q, 08

(Oct.~Dec.)

4Q, 08

(Oct.~Dec.)

4Q, 08

(Oct.~Dec.)

1Q, 09

(Jan. –

Mar.)

1Q, 09

(Jan. –

Mar.)

Mass

Production

4Q, 08

(Oct.~Dec.)

4Q, 08

(Oct.~Dec.)

4Q, 08

(Oct.~Dec.)

4Q, 08

(Oct.~Dec.)

4Q, 08

(Oct.~Dec.)

1Q, 09

(Jan. –

Mar.)

1Q, 09

(Jan. –

Mar.)

or from

Production

Scale

Production

Scale

1 million/

(Total)

month

500K/

month

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