AM29LV010B-70JI Spansion Inc., AM29LV010B-70JI Datasheet - Page 4
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AM29LV010B-70JI
Manufacturer Part Number
AM29LV010B-70JI
Description
Manufacturer
Spansion Inc.
Datasheet
1.AM29LV010B-70JI.pdf
(37 pages)
Specifications of AM29LV010B-70JI
Cell Type
NOR
Density
1Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
17b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
PLCC
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128K
Supply Current
12mA
Mounting
Surface Mount
Pin Count
32
Lead Free Status / RoHS Status
Not Compliant
GENERAL DESCRIPTION
The Am29LV010B is a 1 Mbit, 3.0 Volt-only Flash
memory device organized as 131,072 bytes. The
Am29LV010B has a uniform sector architecture.
The device is offered in 32-pin PLCC and 32-pin TSOP
packages. The byte-wide (x8) data appears on DQ7-DQ0.
All read, erase, and program operations are accomplished
using only a single power supply. The device can also be
programmed in standard EPROM programmers.
The standard Am29LV010B offers access times of 55,
70, and 90 ns (100 ns part is also available), allowing
high speed microprocessors to operate without wait
states. To eliminate bus contention, the device has sep-
arate chip enable (CE#), write enable (WE#) and
output enable (OE#) controls.
The device requires only a single power supply
(2.7V-3.6V) for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facili-
tates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase
command sequence. This initiates the Embedded
4
D A T A S H E E T
Am29LV010B
Erase algorithm—an internal algorithm that automati-
cally preprograms the array (if it is not already
programmed) before executing the erase operation.
During erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by reading the DQ7 (Data#
Polling) and DQ6 (toggle) status bits. After a program
or erase cycle has been completed, the device is ready
to read array data or accept another command.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
V
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of
memory. This can be achieved in-system or via pro-
gramming equipment.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the standby
mode. Power consumption is greatly reduced in both
these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness.
The device electrically erases all bits within a sector
simultaneously via Fowler-Nordheim tunneling. The
data is programmed using hot electron injection.
CC
detector that automatically inhibits write opera-
22140D7 February 24, 2009