IS66WVE2M16BLL-70BLI ISSI, Integrated Silicon Solution Inc, IS66WVE2M16BLL-70BLI Datasheet - Page 2

• Manufacturer Part Number: IS66WVE2M16BLL-70BLI
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS66WVE2M16BLL-70BLI

• Lead Free Status / RoHS Status: Compliant

Rev.00C | March 2010
General Description
WE#
OE#
UB#
CE#
ZZ#
LB#
A0~A20
PSRAM products are high-speed, CMOS pseudo-static random access memory developed
for low-power, portable applications. The 32Mb DRAM core device is organized
as 2 Meg x 16 bits. These devices include the industry-standard, asynchronous memory
interface found on other low-power SRAM or pseudo-SRAM (PSRAM) offerings.
For seamless operation on an asynchronous memory bus, PSRAM products incorporated a
transparent self-refresh mechanism. The hidden refresh requires no additional support
from the system memory controller and has no significant impact on device read/write
performance.
A user-accessible configuration registers (CR) defines how the PSRAM device performs on-
chip refresh and whether page mode read accesses are permitted. This register is
automatically loaded with a default setting during power-up and can be updated at any
time during normal operation.
Special attention has been focused on current consumption during self-refresh. This
product includes two system-accessible mechanisms to minimize refresh current.
Setting sleep enable (ZZ#) to LOW enables one of two low-power modes: partial-array
refresh (PAR) or deep power-down (DPD). PAR limits refresh to only that part of the
DRAM array that contains essential data. DPD halts refresh operation altogether and is
used when no vital information is stored in the device. The system-configurable refresh
mechanisms are accessed through the CR.
Control
Logic
Configuration Register
Decode Logic
Address
[ Functional Block Diagram]
www.issi.com
(CR)
- [e-mail]
Memory Array
2048K X 16
DRAM
IS66WVE2M16BLL
/Output
Buffers
Input
Mux
And
Advanced Information
DQ0~DQ15
2