MT8VDDT6464AG-265DB Micron Technology Inc, MT8VDDT6464AG-265DB Datasheet - Page 2
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MT8VDDT6464AG-265DB
Manufacturer Part Number
MT8VDDT6464AG-265DB
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT8VDDT6464AG-265DB.pdf
(15 pages)
Specifications of MT8VDDT6464AG-265DB
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184UDIMM
Device Core Size
64b
Organization
64Mx64
Total Density
512MByte
Chip Density
512Mb
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.16A
Number Of Elements
8
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Not Compliant
Table 1:
Table 2:
Table 3:
Table 4:
PDF: 09005aef80867ab3/Source: 09005aef80867a99
DD8C32_64x64A.fm - Rev. J 8/08 EN
Parameter
Part Number
Part Number
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
MT8VDDT3264AG-40B__
MT8VDDT3264AY-40B__
MT8VDDT3264AG-335__
MT8VDDT3264AY-335__
MT8VDDT3264AG-262__
MT8VDDT3264AG-26A__
MT8VDDT3264AG-265__
MT8VDDT3264AY-265__
MT8VDDT6464AG-40B__
MT8VDDT6464AY-40B__
MT8VDDT6464AG-335__
MT8VDDT6464AY-335__
MT8VDDT6464AG-262__
MT8VDDT6464AG-26A__
MT8VDDT6464AG-265__
MT8VDDT6464AY-265__
Speed
Grade
-26A
-40B
-335
-262
-265
Key Timing Parameters
Addressing
Part Numbers and Timing Parameters – 256MB
Base device: MT46V32M8,
Part Numbers and Timing Parameters – 512MB
Base device: MT46V64M8,
2
2
Nomenclature
Notes:
Notes:
Industry
PC3200
PC2700
PC2100
PC2100
PC2100
1. The values of
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
actual DDR SDRAM device specifications are 15ns.
PCB revisions. Consult factory for current revision codes. Example: MT8VDDT3264AY-335G6.
Module
Density
Module
Density
256MB
256MB
256MB
256MB
256MB
256MB
256MB
256MB
512MB
512MB
512MB
512MB
512MB
512MB
512MB
512MB
CL = 3
400
1
1
–
–
–
–
256Mb DDR SDRAM
512Mb DDR SDRAM
t
Data Rate (MT/s)
RCD and
Configuration
Configuration
32 Meg x 64
32 Meg x 64
32 Meg x 64
32 Meg x 64
32 Meg x 64
32 Meg x 64
32 Meg x 64
32 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
256MB, 512MB (x64, SR) 184-Pin DDR SDRAM UDIMM
CL = 2.5
333
333
266
266
266
t
RP for -335 modules show 18ns to align with industry specifications;
2
256Mb (32 Meg x 8)
CL = 2
266
266
266
266
200
8K (A0–A12)
4 (BA0, BA1)
Bandwidth
Bandwidth
1K (A0–A9)
Module
Module
256MB
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
1 (S0#)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
8K
t
(ns)
RCD
15
18
15
20
20
Memory Clock/
Memory Clock/
5.0ns/400 MT/s
5.0ns/400 MT/s
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
5.0ns/400 MT/s
5.0ns/400 MT/s
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
Data Rate
Data Rate
(ns)
t
15
18
15
20
20
RP
©2003 Micron Technology, Inc. All rights reserved.
512Mb (64 Meg x 8)
2K (A0–A9, A11)
8K (A0–A12)
4 (BA0, BA1)
512MB
1 (S0#)
(ns)
8K
t
(CL-
(CL-
55
60
60
65
65
RC
Clock Cycles
Clock Cycles
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
2.5-3-3
t
t
3-3-3
3-3-3
2-2-2
2-3-3
3-3-3
3-3-3
2-2-2
2-3-3
RCD-
RCD-
Features
Notes
t
t
RP)
RP)
1