MB85R1002PFTNGE1 Fujitsu Components, MB85R1002PFTNGE1 Datasheet - Page 5

• Manufacturer Part Number: MB85R1002PFTNGE1
• Manufacturer: Fujitsu Components
• Type: NVSRAMr

Specifications of MB85R1002PFTNGE1

• Word Size: 16b
• Density: 1Mb
• Interface Type: Parallel
• Access Time (max): 100ns
• Operating Supply Voltage (typ): 3.3V
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Pin Count: 48
• Mounting: Surface Mount
• Supply Current: 15mA
• Lead Free Status / RoHS Status: Compliant

DS05-13104-6E
■ FUNCTION TRUTH TABLE
Notes : L = V
*1 : OE control of the Pseudo-SRAM means the valid address at the falling edge of OE to read.
*2 : WE control of the Pseudo-SRAM means the valid address and data at the falling edge of WE to write.
Standby Pre-charge
(Pseudo-SRAM,
(Pseudo-SRAM,
WE control*
OE control*
Read
Read
Mode
Write
Write
IL
: Latch address and latch data at falling edge,
, H = V
1
2
)
)
IH
, X can be either V
CE1
H
X
X
X
L
L
L
L
CE2
X
X
X
H
H
H
H
L
IL
WE
or V
X
X
H
X
H
H
L
IH
, High-Z = High Impedance
OE
H
H
X
X
X
X
L
LB
X
X
X
H
H
H
H
H
L
L
L
L
L
L
L
L
UB
X
X
X
H
H
H
H
H
L
L
L
L
L
L
L
L
: Latch address and latch data at rising edge
I/O1 to I/O8 I/O9 to I/O16 Supply Current
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
Dout
Dout
Dout
Din
Din
Din
Din
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
Dout
Dout
Dout
Din
Din
Din
Din
MB85R1002
Operation
Standby
(I
(I
SB
CC
)
)
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