EV2A08AVNYU35 E2V, EV2A08AVNYU35 Datasheet - Page 9

• Manufacturer Part Number: EV2A08AVNYU35
• Manufacturer: E2V

Specifications of EV2A08AVNYU35

• Lead Free Status / RoHS Status: Supplier Unconfirmed

2.4
e2v semiconductors SAS 2010
Write Mode
Table 2-8.
Notes:
Figure 2-6.
Parameter
Write cycle time
Address set-up time
Address valid to end of write (G high)
Address valid to end of write (G low)
Write pulse width (G high)
Write pulse width (G low)
Data valid to end of write
Data hold time
Write low to data Hi-Z
Write high to output active
Write recovery time
W (Write Enable)
E (Chip Enable)
Q (Data Out)
A (Address)
D (Data In)
1. All write occurs during the overlap of E low and W low. Power supplies must be properly grounded and
2. All write cycle timings are referenced from the last valid address to the first transition address.
3. This parameter is sampled and not 100% tested. Transition is measured ±200 mV from the steady-state
decoupled and bus contention conditions must be minimized or eliminated during read and write cycles.
If G goes low at the same time or after W goes low, the output will remain in a high impedance state.
After W or E has been brought high, the signal must remain in steady-state high for a minimum of 2 ns.
The minimum time between E being asserted low in one cycle to E being asserted low in a subsequent
cycle is the same as the minimum cycle time allowed for the device.
voltage. At any given voltage or temperature, t
Write Cycle Timing 1 (W Controlled)
Write Cycle Timing 1 (W Controlled)
(2)
(3)
(3)
Hi-Z
t
AVWL
t
WLQZ
t
t
AVWH
AVAV
(1)
Symbol
t
t
t
t
t
t
t
t
t
t
t
WLQZ
t
t
WLWH
WLWH
WHQX
AVWH
AVWH
WLEH
WLEH
DVWH
WHDX
WLQZ
WHAX
AVWL
AVAV
(max) < t
t
t
WLEH
WLWH
Data Valid
Hi-Z
t
DVWH
WHQX
Min
35
18
20
15
15
10
12
0
0
0
3
(min).
t
WHDX
1024B–HIREL–10/10
t
WHQX
t
Max
WHAX
12
–
–
–
–
–
–
–
–
–
–
EV2A08A
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
9