EV2A16AVNYU35 E2V, EV2A16AVNYU35 Datasheet - Page 5

• Manufacturer Part Number: EV2A16AVNYU35
• Manufacturer: E2V

Specifications of EV2A16AVNYU35

• Lead Free Status / RoHS Status: Supplier Unconfirmed

2.2
e2v semiconductors SAS 2009
Inhibited
Writes
V
Power-up and Power-down Sequencing
WI
/W
/E
Table 2-2.
Notes:
MRAM is protected from write operations whenever V
V
power supplies to stabilize. The /E and /W control signals should track V
V
nals should be pulled up with a resistor so that signal remains high if the driving signal is Hi-Z during
power up. Any logic that drives /E and /W should hold the signals high with a power-on reset signal for
longer that the startup time. During power loss or brownout where V
tected and a startup time must be observed when power returns above V
Parameter
Power supply voltage
Write inhibit voltage
Input high voltage
Input low voltage
Operating temperature
DDmin
IH
(whichever is lower) and remain high for the startup time. In most systems, this means that these sig-
, there is a startup time of 2 ms before read or write operations can start. This time allows memory
1. There is a 2 ms startup time once V
2. V
3. V
4. Case temperature
5. Junction temperature
Startup Time
tion below.
IH
IL
(min) = 0.5 Vdc; V
Operating Conditions
(max) = V
Operation
Normal
DD
V
+ 0.3 Vdc; V
DD
IL
(min) = 2.0 Vac (pulse width ≤ 10 ns) for I ≤ 20.0 mA.
Symbol
V
V
V
V
T
DD
IH
WI
IH
IL
Brownout or
Power Loss
(max) = V
DD
exceeds V
DD
–0.5
–40
–55
3.0
Min
+ 2.0 Vac (pulse width ≤ 10 ns) for I ≤ 20.0 mA.
2.5
2.2
(1)
(4)
(4)
(3)
Startup Time
DDmin
DD
is less than V
. See powerup and powerdown sequencing sec-
Typ
3.3
2.7
Operation
–
–
Normal
DD
V
goes below V
DD
DDmin
DD
WI
on power up to V
. As soon as V
V
.
DD
+110
+125
3.0
0918B–HIREL–06/09
Max
3.6
0.8
+ 0.3
(1)
(5)
(5)
(2)
WI
EV2A16A
, writes are pro-
V
WI
DD
DD
Unit
exceeds
–0.2V or
°C
V
V
V
V
5