CAT661ESA ON Semiconductor, CAT661ESA Datasheet - Page 3

• Manufacturer Part Number: CAT661ESA
• Manufacturer: ON Semiconductor
• Type: Inverting/Step Upr

Specifications of CAT661ESA

• Operating Supply Voltage (min): 1.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Package Type: SOIC
• Pin Count: 8
• Mounting: Surface Mount
• Output Voltage: -5.5 to -1.5/5 to 11V
• Output Current: 100mA
• Lead Free Status / RoHS Status: Not Compliant

ABSOLUTE MAXIMUM RATINGS
V+ to GND ............................................................. 6V
Input Voltage (Pins 1, 6 and 7) .. -0.3V to (V+ + 0.3V)
BOOST/FC and OSC Input Voltage ........... The least
negative of (Out - 0.3V) or (V+ - 6V) to (V+ + 0.3V)
Output Short-circuit Duration to GND .............. 1 sec.
(OUT may be shorted to GND for 1 sec without damage but
shorting OUT to V+ should be avoided.)
Continuous Power Dissipation (T
ELECTRICAL CHARACTERISTICS
V+ = 5V, C1 = C2 = 100 F, Boost/FC = Open, C
Temperature is T
1. In Figure 1, test circuit electrolytic capacitors C1 and C2 are 100 F and have 0.2 maximum ESR. Higher ESR levels may reduce
efficiency and output voltage.
2. The output resistance is a combination of the internal switch resistance and the external capacitor ESR. For maximum voltage and
efficiency keep external capacitor ESR under 0.2 .
3. FOSC is tested with C
OSC when the device is inserted into a test socket without an external C
Parameter
Supply Voltage
Supply Current
Output Current
Output Resistance
Oscillator Frequency FOSC
(Note 3)
OSC Input Current
Power Efficiency
Voltage Conversion
Efficiency
Plastic DIP ................................................ 730mW
SO ............................................................ 500mW
TDFN ............................................................... 1W
A
= T
OSC
AMIN
= 100pF to minimize test fixture loading. The test is correlated back to C
VEFF
Symbol
IOUT
IOSC
RO
VS
PE
IS
to T
AMAX
A
= 70 C)
unless otherwise noted.
Conditions
Inverter: LV = Open. R
Inverter: LV = GND. R
Doubler: LV = OUT. R
BOOST/FC = open, LV = Open
BOOST/FC = V+ , LV = Open
OUT is more negative than -4V
C1 = C2 = 10 F,
BOOST/FC = V+ (C1, C2 ESR
C1 = C2 = 100 F (Note 2)
BOOST/FC = Open
BOOST/FC = V+
BOOST/FC = Open
BOOST/FC = V+
R
OUT, T
R
OUT, T
I
No load, T
L
L
L
= 100mA to GND, T
= 1k connected between V+ and
= 500 connected between GND and
A
A
= 25 C (Doubler)
= 25 C (Inverter)
A
= 25 C
OSC
= 0pF, and Test Circuit is Figure 1 unless otherwise noted.
3
OSC
A
L
L
Storage Temperature ......................... -65 C to 160 C
Lead Soldering Temperature (10 sec) ............. 300 C
ESD Rating-Human Body Model ..................... 2000V
Note: T
These are stress ratings only and functional operation is not
implied. Exposure to absolute maximum ratings for prolongued
time periods may affect device reliability. All voltages are with
respect to ground.
L
= 1k
= 1k
= 25 C (Inverter)
.
= 1k
Operating Ambient Temperature Ranges
CAT661E .............. -40 C to 85 C
A
= Ambient Temperature
0.5 )
OSC
Min.
100
3.0
1.5
2.5
10
80
96
92
99
=0pF to simulate the capacitance at
99.9
Typ
135
0.2
3.5
3.5
25
98
96
88
1
10
2
Max.
5.5
5.5
5.5
0.5
10
10
Doc. No. 5003, Rev. J
3
Units
kHz
mA
mA
%
%
V
A