PPC405EP-3GB200C Applied Micro Circuits Corporation, PPC405EP-3GB200C Datasheet - Page 40

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PPC405EP-3GB200C

Manufacturer Part Number
PPC405EP-3GB200C
Description
Manufacturer
Applied Micro Circuits Corporation
Datasheet

Specifications of PPC405EP-3GB200C

Family Name
405EP
Device Core
PowerPC
Device Core Size
32b
Frequency (max)
200MHz
Instruction Set Architecture
RISC
Supply Voltage 1 (typ)
1.8V
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.65V
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
385
Package Type
EBGA
Lead Free Status / RoHS Status
Not Compliant

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PPC405EP – PowerPC 405EP Embedded Processor
Table 11. DC Electrical Characteristics
40
Active Operating Current (V
Active Operating Current (V
Active Operating Current (OV
PLL V
Active Operating Power–266 MHz
Active Operating Power–333MHz
Note:
1. The maximum current and power values listed above are not guaranteed to be the highest obtainable. These values are
2. AV
V
a. In general, there would be four PCI devices, an external bus master on the peripheral bus, and external wrap-back on the
b. Typical current and power are characterized at V
c. Maximum current and power are characterized at V
dependent on many factors including the type of applications running, clock rates, use of internal functional capabilities, external
interface usage, case temperature, and the power supply voltages. Your specific application can produce significantly different
results. V
(DMA, PCI, Ethernet, and so on). OV
utilization of the external buses. The following information provides details about the conditions under which the values in the table
above could be obtained:
DD
DD
DD
applications under the Linux operating system.
designed to maximize CPU power consumption. An external PCI master heavily loads the PCI bus with transfers targeting
SDRAM while the internal DMA controller further increases SDRAM bus traffic.
Ethernet port. For I
Input current
should be derived from V
DD
(logic) current and power are primarily dependent on the applications running and the use of internal chip functions
Parameter
L1
ODD
DD
DD
GND
DD
)–266MHz
)–333MHz
+
)
measurements, PLB = 133.3MHz, OPB = PerClk = 66.6MHz, and PCI = SysClk = 33.3MHz.
C1
DD
using the following circuit:
DD
C2
(I/O) current and power are primarily dependent on the capacitive loading, frequency, and
Symbol
C3
I
P
P
I
I
I
ODD
PLL
DD
DD
DD
DD
DD
DD
= +1.8V, OV
AGND
= +1.9V, OV
AV
DD
Minimum
DD
C2 – 0.1
C1 – 3.3
C3 – 0.01
L1 – 2.2
DD
= +3.3V, and T
= +3.6V, and T
LQH3C2R2M34) or SMT chip ferrite bead (equivalent
to MuRata BLM31A700S)
dielectric or equivalent
dielectric or equivalent
μ
μ
μ
μ
H SMT inductor (equivalent to MuRata
F SMT monolithic ceramic capacitor with X7R
F SMT tantalum
F SMT monolithic ceramic capacitor with X7R
Typical
0.72
0.76
300
325
45
16
C
= +36
C
= +85
°
C while running various
Revision 1.08 – March 24, 2008
°
C while running applications
Maximum
1.92
2.07
610
690
200
23
Data Sheet
Unit
mA
mA
mA
mA
W
W
AMCC

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