MCIMX353DVM5B Freescale, MCIMX353DVM5B Datasheet - Page 48
MCIMX353DVM5B
Manufacturer Part Number
MCIMX353DVM5B
Description
Manufacturer
Freescale
Datasheet
1.MCIMX353DVM5B.pdf
(148 pages)
Specifications of MCIMX353DVM5B
Operating Temperature (min)
-20C
Operating Temperature (max)
70C
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Lead Free Status / RoHS Status
Compliant
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SD1
SD2
SD3
SD6
ID
ADDR
RAS
CAS
SDCLK
SDCLK
WE
CS
SDRAM clock high-level width
SDRAM clock low-level width
SDRAM clock cycle time
Address setup time
SD6
Test conditions are: pin voltage 1.7 V–1.95 V, capacitance 15 pF for all pins
(both DDR and non-DDR pins), drive strength is high (7.2 mA). “High” is
defined as 80% of signal value and “low” is defined as 20% of signal value.
SDR SDRAM CLK parameters are measured from the 50% point—that is,
“high” is defined as 50% of signal value, and “low” is defined as 50% of
signal value. tCH + tCL will not exceed 7.5 ns for 133 MHz. DDR SDRAM
CLK parameters are measured at the crossing point of SDCLK and SDCLK
(inverted clock).
The timing parameters are similar to the ones used in SDRAM data sheets.
Table 34
the ESDCTL at the negative edge of SDCLK, and the parameters are
measured at maximum memory frequency.
i.MX35 Applications Processors for Industrial and Consumer Products, Rev. 9
BA
indicates SDRAM requirements. All output signals are driven by
SD7
Table 35. SDRAM Refresh Timing Parameters
Figure 29. SDRAM Refresh Timing Diagram
SD11
Parameter
NOTE
SD10
SD1
SD3
Symbol
tCH
tCK
tCL
tAS
SD2
SD10
Min.
3.4
3.4
7.5
1.8
ROW/BA
Freescale Semiconductor
Max.
4.1
4.1
—
—
Unit
ns
ns
ns
ns
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