MCM20027IBMN Freescale, MCM20027IBMN Datasheet - Page 65

• Manufacturer Part Number: MCM20027IBMN
• Manufacturer: Freescale
• Type: CMOSr

Specifications of MCM20027IBMN

• Sensor Image Color Type: Monochrome
• Sensor Image Size Range: >= 480,000Pixels
• Sensor Image Size: 1280x1024Pixels
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (typ): 3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Temp Range: 0C to 40C
• Package Type: CLCC
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Supplier Unconfirmed

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Notes:
1.For
2.Refer to typical values from
3.For a 100 x 100 pixel region under uniform illumination with output signal equal to 80% of saturation signal.
Notes:
1.For
2.Refer to typical values from
MOTOROLA, INC. 2002
Symbol
P
Symbol
DSNU
Symbol
P
Symbol
STDBY
CTE
PRNU
AVG
QE
QE
E
QE
V
V
E
I
I
I
QE
I
I
d
OH
OL
OZ
DD
sat
OH
OL
sat
g
b
r
= 550 nm wavelength.
= 550 nm wavelength.
MCM20027 MONOCHROME CMOS IMAGE SENSOR ELECTRO-OPTICAL CHARACTERISTICS
Green Peak Quantum Efficiency @
Blue Peak Quantum Efficiency @
Red Peak Quantum Efficiency @
MCM20027 COLOR CMOS IMAGE SENSOR ELECTRO-OPTICAL CHARACTERISTICS
Dark Signal Non-Uniformity (Entire Field)
Standby Power
Average Power
Peak Quantum Efficiency (@550nm)
Maximum Standby Supply Current
3-State Output Leakage Current
Parameter
Pixel Charge Transfer Efficiency
Photoresponse Non-uniformity
Photodiode Dark Current
POWER DISSIPATION (VDD = 3.0V, VDD referenced to VSS; At = 25°C)
Saturation Exposure
Output High Current
Output High Voltage
Saturation Exposure
Output Low Voltage
Output Low Current
Figure
Figure
Parameter
Parameter
Parameter
Sensitivity
3, MCM20027 nominal spectral response.
3, MCM20027 nominal spectral response.
Freescale Semiconductor, Inc.
CMOS IMAGE SENSOR CHARACTERISTICS
For More Information On This Product,
= 650 nm
= 450 nm
= 550 nm
13.5 MHz Operation
INIT Pin Logic High
Go to: www.freescale.com
Condition
Output = High Impedance, V
V
DD
I
V
out
DD
V
V
= Min., V
DD
DD
= 0mA, V
= Min., V
= Min., I
= Min., I
OH
0.14
Typ
Typ
0.3
in
12
11
OL
18
12
8
0.9995
OH
Min. = 0.8 * V
OL
= V
Typ
1.8
0.2
0.4
Max = 0.4 V
= -100 A
= 100 A
DD
out
or V
= V
SS
DD
DD
or V
Typ
100
250
SS
Revision 8.4 - 24 Oct 2002 :
V
DD
-10
ImageMOS
-3
ImageMOS
% pk-pk
3
0
- 0.2
J/cm
J/cm
Unit
Unit
V/lux-sec
%
%
%
%
nA/cm
% rms
Unit
%
2
2
2
100
0.2
10
Notes
Notes
Notes
Unit
mW
1
2
2
2
uW
1
2
3
1
mA
mA
mW
V
V
A
MCM20027
65