BAR81W Infineon Technologies, BAR81W Datasheet

DIODE, RF, PIN, SOT-343

BAR81W

Manufacturer Part Number
BAR81W
Description
DIODE, RF, PIN, SOT-343
Manufacturer
Infineon Technologies
Type
Switchr
Datasheets

Specifications of BAR81W

Forward Current
100mA
Forward Voltage
1V
Operating Temperature Classification
Military
Reverse Voltage
30V
Mounting
Surface Mount
Maximum Series Resistance @ Maximum If
1@5mAOhm
Operating Temperature (max)
125C
Capacitance Ct
0.6pF
Forward Current If(av)
100mA
No. Of Pins
4
Operating Temperature Range
-55°C To +125°C
Reverse Voltage Vr Max
30V
Termination Type
SMD
Diode
RoHS Compliant
Diode Type
RF
Package / Case
SOT-343
Diode Case Style
SOT-343
Rohs Compliant
Yes
Packages
SOT343
If (max)
100.0 mA
Ct (max)
1.0 pF
Rf (typ)
0.7 Ohm
Trr (typ)
80.0 ns
Configuration
Single
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAR81W
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
BAR81W
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BAR81W E6327
Manufacturer:
Infineon
Quantity:
12 122
Part Number:
BAR81WE6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
BAR81W
BAR81W
Junction - soldering point
1
2
Silicon RF Switching Diode
Type
* series inductance chip to ground
Maximum Ratings at T
Parameter
Diode reverse voltage
Forward current
Total power dissipation
T
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
Pb-containing package may be available upon special request
For calculation of R
Pb-free (RoHS compliant) package
Qualified according AEC Q101
s
Designed for use in shunt configuration in
High shunt signal isolation
Low shunt insertion loss
Optimized for short - open transformation
high performance RF switches
using
138°C
lines
thJA
please refer to Application Note Thermal Resistance
A
2)
= 25°C, unless otherwise specified
SOT343
Package
1)
Configuration
single shunt-diode
1
Symbol
V
I
P
T
T
T
Symbol
R
F
j
op
stg
R
tot
thJS
-55 ... 125
-55 ... 150
Value
Value
100
100
150
30
120
L
0.15*
S
(nH)
2007-04-19
BAR81...
Marking
BBs
V
mA
mW
°C
K/W
Unit
Unit

Related parts for BAR81W

BAR81W Summary of contents

Page 1

... Low shunt insertion loss Optimized for short - open transformation using lines Pb-free (RoHS compliant) package Qualified according AEC Q101 BAR81W Type BAR81W * series inductance chip to ground Maximum Ratings 25°C, unless otherwise specified A Parameter Diode reverse voltage Forward current Total power dissipation T 138° ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Reverse current Forward voltage I = 100 Characteristics Diode capacitance MHz ...

Page 3

Diode capacitance Parameter 1 pF 0.8 0.7 0.6 1 Mhz ... 1.8 GHz 0.5 0.4 0.3 0 Forward resistance 100MHz 1 10 ...

Page 4

... Forward current BAR81W 120 mA 100 Permissible Pulse Load BAR81W Fmax FDC 0.005 0.01 0.02 0. 0.1 0.2 0 Permissible Puls Load R BAR81W 10 K 105 120 °C 150 thJS 3 2 0.5 0.2 1 0.1 0.05 0.02 0.01 0.005 2007-04-19 BAR81... ( ...

Page 5

Package Outline +0.1 0.3 -0.05 4x 0.1 Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 2 ±0.2 0.1 MAX. 1.3 0 0.15 1 ...

Page 6

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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