BAP63-03T NXP Semiconductors, BAP63-03T Datasheet - Page 4

• Manufacturer Part Number: BAP63-03T
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP63-03T

• Configuration: Single
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Power Dissipation: 500mW
• Operating Temperature Classification: Military
• Reverse Voltage: 50V
• Package Type: SOD-323
• Mounting: Surface Mount
• Maximum Series Resistance @ Minimum If: 3.5@0.5mAOhm
• Maximum Series Resistance @ Maximum If: 1.5@100mAOhm
• Typical Carrier Life Time: 310ns
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 2
• Applications Frequency Range: SHF
• Lead Free Status / RoHS Status: Compliant

NXP Semiconductors
GRAPHICAL DATA
2004 Feb 11
handbook, halfpage
handbook, halfpage
Silicon PIN diode
|
T
Fig.2
s 21
(1) I
(2) I
Diode inserted in series with a 50  stripline circuit and biased via the
analyzer Tee network.
T
Fig.4
(dB)
j
amb
= 25 C; f = 100 MHz.
−0.1
−0.2
−0.3
−0.4
−0.5
(Ω)
10
r D
|
2
F
F
= 25 C.
10
−1
0
10
1
= 100 mA.
= 10 mA.
0
−1
Forward resistance as a function of forward
Insertion loss (s
current; typical values.
as a function of frequency; typical values.
(1)
(2)
1
1
(3) I
(4) I
(3)
(4)
F
F
21
= 1 mA.
= 0.5 mA.

2
) of the diode in on-state
10
2
f (GHz)
I F (mA)
MGW131
MGW126
10
3
2
4
handbook, halfpage
handbook, halfpage
|
T
Fig.3
Diode zero biased and inserted in series with a 50  stripline circuit.
T
Fig.5
s 21
(fF)
(dB)
C d
j
amb
= 25 C; f = 1 MHz.
−10
−20
−30
−40
500
400
300
200
100
|
2
= 25 C.
0
0
0
0
Diode capacitance as a function of reverse
voltage; typical values.
Isolation (s
function of frequency; typical values.
4
1
21

2
8
) of the diode in off-state as a
12
2
Product specification
f (GHz)
BAP63-03
16
V R (V)
MGW132
MGW130
20
3