BSM200GA170DN2 Infineon Technologies, BSM200GA170DN2 Datasheet - Page 7

• Manufacturer Part Number: BSM200GA170DN2
• Description: IGBT Modules N-CH 1.7KV 290A
• Manufacturer: Infineon Technologies

Specifications of BSM200GA170DN2

• Configuration: Single Dual Emitter
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 290 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 62MM
• Ic (max): 200.0 A
• Vce(sat) (typ): 3.4 V
• Technology: IGBT2 Standard
• Housing: 62 mm
• Lead Free Status / RoHS Status: Not Compliant

BSM 200 GA 170 DN2
Typ. switching time
I = f (I
Typ. switching losses
E = f (I
par.: V
par.: V
E
t
mWs
10
10
10
10
600
400
300
200
100
C
ns
C
) , inductive load , T
CE
CE
0
4
3
2
1
) , inductive load , T
0
0
= 1200 V, V
= 1200 V, V
100
100
GE
200
GE
200
= ± 15 V, R
= ± 15 V, R
j
j
= 125°C
= 125°C
300
300
G
G
A
A
= 6.8
= 6.8
tdoff
tdon
tr
tf
Eon
Eoff
I
I
C
C
500
500
7
Typ. switching time
t = f (R
Typ. switching losses
E = f (R
par.: V
par.: V
E
t
mWs
10
10
10
10
600
400
300
200
100
ns
G
CE
CE
0
4
3
2
1
G
) , inductive load , T
0
0
) , inductive load , T
= 1200 V, V
= 1200 V, V
5
5
10
10
15
15
GE
GE
= ± 15 V, I
= ± 15 V, I
20
20
j
j
= 125°C
= 125°C
25
25
30
30
C
C
= 200 A
= 200 A
Oct-27-1997
tdoff
tdon
tr
tf
Eon
Eoff
R
R
G
G
40
40