FP15R12KS4C Infineon Technologies, FP15R12KS4C Datasheet - Page 10

• Manufacturer Part Number: FP15R12KS4C
• Description: IGBT Transistors 1200V 15A PIM
• Manufacturer: Infineon Technologies

Specifications of FP15R12KS4C

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 3.2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 15 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 180 W
• Maximum Operating Temperature: + 125 C
• Package / Case: EconoPIM2-24
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Packages: AG-ECONO2-1
• Ic (max): 15.0 A
• Vce(sat) (typ): 3.2 V
• Technology: IGBT2 Fast
• Housing: EconoPIM™ 2
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
100000
10000
1000
30
25
20
15
10
100
5
0
0
Durchlaßkennlinie der Gleichrichterdiode (typisch)
Forward characteristic of Rectifier Diode (typical)
0
NTC- Temperaturkennlinie (typisch)
NTC- temperature characteristic (typical)
0,2
20
0,4
40
FP15R12KS4C
Tj = 25°C
Tj = 150°C
0,6
60
T
V
C
F
[°C]
10/11
[V]
Rtyp
0,8
80
R = f (T)
100
1
I
F
= f (V
120
1,2
F
)
140
1,4
DB-PIM-S_IGBT_V2.xls
160
1,6
2001-11-28