BSM300GA120DN2S Infineon Technologies, BSM300GA120DN2S Datasheet
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Manufacturer Part Number
BSM300GA120DN2S
Description
IGBT Modules 1200V 300A SINGLE
Manufacturer
Infineon Technologies
Specifications of BSM300GA120DN2S
Configuration
Single
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.5 V
Continuous Collector Current At 25 C
430 A
Gate-emitter Leakage Current
320 nA
Power Dissipation
2500 W
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
62MM
Ic (max)
300.0 A
Vce(sat) (typ)
2.5 V
Technology
IGBT2 Standard
Housing
62 mm
Lead Free Status / RoHS Status
Compliant
Available stocks
Part Number:
BSM300GA120DN2S
Manufacturer:
EUPEC/Infineon
Part Number:
BSM300GA120DN2S
Part Number:
BSM300GA120DN2S _E3256
BSM 300 GA 120 DN2S
IGBT Power Module
• Single switch
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 300 GA 120 DN2
BSM 300 GA 120 DN2 S
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
= 1 ms
V
1200V 430A
1200V 430A
CE
I
C
1
Package
SINGLE SWITCH 1
SSW SENSE 1
V
V
I
I
P
T
T
R
R
V
-
-
-
-
Symbol
V
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
40 / 125 / 56
-40 ... + 125
Values
Ordering Code
C67076-A2007-A70
C67070-A2017-A70
+ 150
± 20
1200
1200
2500
2500
0.125
430
300
860
600
0.05
F
20
11
Oct-27-1997
Unit
V
A
W
°C
K/W
Vac
mm
sec
Related parts for BSM300GA120DN2S
BSM300GA120DN2S Summary of contents
BSM 300 GA 120 DN2S IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 300 GA 120 DN2 BSM 300 GA 120 DN2 S Maximum Ratings Parameter Collector-emitter voltage ...
BSM 300 GA 120 DN2S Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage 300 ...
BSM 300 GA 120 DN2S Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 3.3 Gon Rise time V = 600 V, ...
BSM 300 GA 120 DN2S Power dissipation tot C parameter: T 150 °C j 2600 W 2200 P 2000 tot 1800 1600 1400 1200 1000 800 600 400 200 Collector ...
BSM 300 GA 120 DN2S Typ. output characteristics parameter µ ° 600 A 17V 500 15V I 13V C 450 11V 9V 7V 400 350 ...
BSM 300 GA 120 DN2S Typ. gate charge Gate parameter 300 A C puls 600 200 400 600 ...
BSM 300 GA 120 DN2S Typ. switching time inductive load , T = 125° par 600 ± ...
BSM 300 GA 120 DN2S Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 600 A 500 I F 450 400 350 T =125°C j 300 250 200 150 100 50 0 0.0 ...
BSM 300 GA 120 DN2 S Circuit Diagram Package Outlines Dimensions in mm Weight: 420 Oct-27-1997 ...
... Technische Information / Technical Information IGBT-Module BSM300GA120DN2S IGBT-Modules Anhang C-Serie Appendix C-series Gehäuse spezifische Werte Housing specific values Modulinduktivität stray inductance module Gehäusemaße C-Serie Package outline C-series typ sCE 4 Appendix C-series nH Appendix_C-Serie_BSM300GA120DN2.xls 2001-09-20 ...
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