BSM20GD60DLC Infineon Technologies, BSM20GD60DLC Datasheet

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BSM20GD60DLC

Manufacturer Part Number
BSM20GD60DLC
Description
IGBT Modules 600V 20A 3-PHASE
Manufacturer
Infineon Technologies
Datasheets
1.BSM20GD60DLC.pdf (9 pages)
2.BSM20GD60DLC.pdf (8 pages)

Specifications of BSM20GD60DLC

Configuration
Hex
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.95 V
Continuous Collector Current At 25 C
32 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
250 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPACK 2A
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSM20GD60DLC
Manufacturer:
SIEMENS
Quantity:
560
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
BSM20GD60DLC
Quantity:
50
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSM20GD60DLCE3224
Manufacturer:
ARTESYN
Quantity:
1 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
BSM20GD60DLCE3224
Quantity:
80
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
Isolations-Prüfspannung
insulation test voltage
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
prepared by: Andreas Vetter
approved by: Michael Hornkamp
IGBT-Module
IGBT-Modules
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Transistor / Transistor
Technische Information / Technical Information
2
t - value, Diode
T
T
t
T
t
V
RMS, f= 50Hz, t= 1min.
I
I
I
f= 1MHz, T
f= 1MHz, T
V
V
V
date of publication: 2000-04-26
revision: 1
BSM 20 GD 60 DLC
P
P
C
C
C
C
C
C
R
CE
CE
CE
= 1ms, T
= 1ms
= 20A, V
= 20A, V
= 0,5mA, V
= 80°C
= 25°C
= 25°C, Transistor
= 0V, t
= 600V, V
= 600V, V
= 0V, V
p
= 10ms, T
GE
GE
C
GE
vj
vj
= 80°C
= 25°C, V
= 25°C, V
= 15V, T
= 15V, T
CE
= 20V, T
GE
GE
= V
= 0V, T
= 0V, T
GE
1 (8)
Vj
, T
vj
vj
= 125°C
vj
CE
CE
= 25°C
= 125°C
= 25°C
vj
vj
vj
= 25°C
= 25V, V
= 25V, V
= 25°C
= 125°C
GE
GE
= 0V
= 0V
V
V
I
V
V
V
C,nom.
I
I
C
I
P
C
I
CRM
CE sat
GE(th)
FRM
CES
GES
GES
I
ISOL
CES
I
I
2
C
F
res
tot
ies
t
min.
4,5
-
-
-
-
-
-
-
+/- 20V
typ.
1,95
2,20
0,07
600
125
130
2,5
5,5
1,1
20
32
40
20
40
1
1
-
BSM 20 GD 60 DLC
max.
2,45
500
400
6,5
2000-02-08
-
-
-
-
A
mA
kV
nF
nF
µA
nA
W
V
A
A
A
V
A
A
V
V
V
2
s

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BSM20GD60DLC Summary of contents

Page 1

Technische Information / Technical Information IGBT-Module IGBT-Modules Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom ...

Page 2

Technische Information / Technical Information IGBT-Module IGBT-Modules Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) ...

Page 3

Technische Information / Technical Information IGBT-Module IGBT-Modules Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Mechanische Eigenschaften / Mechanical ...

Page 4

Technische Information / Technical Information IGBT-Module IGBT-Modules Ausgangskennlinie (typisch) Output characteristic (typical Tvj = 25°C Tvj = 125° 0,0 0,5 Ausgangskennlinienfeld (typisch) Output characteristic (typical) 40 VGE = 8V 35 VGE ...

Page 5

Technische Information / Technical Information IGBT-Module IGBT-Modules Übertragungscharakteristik (typisch) Transfer characteristic (typical Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical ...

Page 6

Technische Information / Technical Information IGBT-Module IGBT-Modules Schaltverluste (typisch) Switching losses (typical) 2,0 1,8 Eon Eoff 1,6 Erec 1,4 1,2 1,0 0,8 0,6 0,4 0,2 0 Schaltverluste (typisch) Switching losses (typical) 1,0 0,9 0,8 0,7 0,6 0,5 0,4 ...

Page 7

Technische Information / Technical Information IGBT-Module IGBT-Modules Transienter Wärmewiderstand Transient thermal impedance 10 1 0,1 0,01 0,001 0, [K/kW] : IGBT i [sec] : IGBT i r [K/kW] : Diode i [sec] : Diode i Sicherer Arbeitsbereich (RBSOA) ...

Page 8

Technische Information / Technical Information IGBT-Module IGBT-Modules Gehäusemaße / Schaltbild Package outline / Circuit diagram BSM DLC 8 (8) BSM DLC 2000-02-08 ...

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