BSM150GAL120DLC Infineon Technologies, BSM150GAL120DLC Datasheet - Page 3

• Manufacturer Part Number: BSM150GAL120DLC
• Description: IGBT Transistors 1200V 150A CHOPPER
• Manufacturer: Infineon Technologies

Specifications of BSM150GAL120DLC

• Configuration: Single
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 300A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 150 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1.25 KW
• Maximum Operating Temperature: + 125 C
• Package / Case: IS6a ( 62 mm )-5
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Lead Free Status / RoHS Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Brems-Chopper / Diode-brake-chopper
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
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Vorläufige Daten
preliminary data
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