FD600R17KE3_B2 Infineon Technologies, FD600R17KE3_B2 Datasheet - Page 7

• Manufacturer Part Number: FD600R17KE3_B2
• Description: IGBT Modules N-CH 1.7KV 950A
• Manufacturer: Infineon Technologies

Specifications of FD600R17KE3_B2

• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Single Dual Collector Dual Emitter
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 950 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Ic (max): 600.0 A
• Vce(sat) (typ): 2.0 V
• Technology: IGBT3
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
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'
%USi , V6gW
%USi , V6gW
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uCLb0 , V W
uCLb0 , V W
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%USi , V6gW
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uCLb0 , V W
uCLb0 , V W
B
B
B
B
300
250
200
150
100
100
50
10
0
1
0,001
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0
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I & B
I & B
I & B
I & B
4
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200
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uCLb0 4
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0,01
400
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/
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FD600R17KE3_B2
6g s<t
4
4
# V
# V
# V
# V
600
4
4
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0,1
V
V
V
V
Ps t
s t
t
3
33
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W
W
W
W
800
W
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W
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33
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1000
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#
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33
5
1200
10
7
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%USi , VOEW
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4
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6g , V/gW
6g , V/gW
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B
B
B
B
B
B
B
B
1200
1100
1000
250
225
200
175
150
125
100
900
800
700
600
500
400
300
200
100
75
50
25
0
0
0,0
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1,0
8 10 12 14 16 18 20 22 24
a &
a &
a &
a &
OE sQt
/g s/t
# V
# V
# V
# V
1,5
V
V
V
V
Vorläufige Daten
preliminary data
W
W
W
W
2,0
W
W
W
W
V
V
V
V
V
V
V
V
2,5
W
W
W
W
W
W
W
W
3,0