BSM200GB170DLC Infineon Technologies, BSM200GB170DLC Datasheet

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BSM200GB170DLC

Manufacturer Part Number
BSM200GB170DLC
Description
IGBT Modules 1700V 200A DUAL
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSM200GB170DLC

Configuration
Dual
Channel Type
N
Collector-emitter Voltage
1.7kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1700 V
Collector-emitter Saturation Voltage
2.6 V
Continuous Collector Current At 25 C
400 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
1660 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
62MM
Ic (max)
200.0 A
Vce(sat) (typ)
2.6 V
Technology
IGBT2 Low Loss
Housing
62 mm
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSM200GB170DLC
Manufacturer:
EUPEC
Quantity:
210
Part Number:
BSM200GB170DLC
Quantity:
50
IGBT-Module
IGBT-Modules
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collctor current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
Isolations-Prüfspannung
insulation test voltage
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
prepared by: Alfons Wiesenthal
approved by: Dr. Schilling
Höchstzulässige Werte / Maximum rated values
Charakteristische Werte / Characteristic values
Technische Information / Technical Information
2
t - value, Diode
T
T
T
t
T
t
V
RMS, f = 50 Hz, t = 1 min.
I
I
I
V
f = 1MHz,T
f = 1MHz,T
V
V
date of publication: 2002-07-04
revision: 3
BSM 200 GB 170 DLC
C
C
C
P
p
vj
C
C
C
R
GE
CE
CE
= 1 ms
= 1 ms, T
= 200A, V
= 200A, V
= 9mA, V
= 25°C, Transistor
= 25°C
= 80 °C
= 25 °C
= 0V, t
= -15V ... +15V
= 1700V, V
= 0V, V
p
vj
vj
= 10ms, T
C
CE
GE
GE
GE
= 25°C,V
= 25°C,V
= 80°C
= V
= 20V, T
= 15V, T
= 15V, T
GE
GE
= 0V, T
, T
1(8)
vj
CE
CE
vj
= 125°C
vj
vj
vj
= 25°C
= 25V, V
= 25V, V
= 25°C
= 25°C
= 125°C
vj
= 25°C
GE
GE
= 0V
= 0V
V
V
I
V
V
V
C,nom.
I
I
C
C
I
I
P
CRM
FRM
CE sat
GE(th)
Q
CES
GES
I
ISOL
CES
I
GES
I
2
C
res
tot
F
ies
G
t
min.
4,5
-
-
-
-
-
-
-
+/- 20V
1700
1660
typ.
200
400
400
200
400
3,4
2,6
3,1
5,5
2,4
0,7
11
15
-
-
BSM200GB170DLC_3.xls
max.
400
3,2
3,6
6,5
5
-
-
-
k A
mA
µC
kV
nF
nF
nA
W
V
A
A
A
V
A
A
V
V
V
2
s

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BSM200GB170DLC Summary of contents

Page 1

... GE vj date of publication: 2002-07-04 revision: 3 1(8) V 1700 V CES I 200 A C,nom. I 400 400 A CRM P 1660 W tot V +/- 20V V GES I 200 400 A FRM 3,4 kV ISOL min. typ. max 2,6 3 sat - 3,1 3 4,5 5,5 6,5 V GE(th 2,4 - µ ies res CES 400 nA GES BSM200GB170DLC_3.xls ...

Page 2

... 2(8) min. typ. max 0,10 - µs d,on - 0,10 - µ 0,10 - µ 0,10 - µ 0,80 - µs d,off - 0,90 - µ 0,03 - µ 0,03 - µ off I - 800 - sCE CC'+EE' min. typ. max 2,1 2 2,1 2 160 - 200 - µ 105 - µ rec - BSM200GB170DLC_3.xls ...

Page 3

... Transistor / transistor, DC Diode/Diode, DC pro Modul / per module W/m W/m*K Paste grease Schraube / screw M6 Anschlüsse / terminals M6 3(8) min. typ. max 0,075 K/W thJC - - 0,150 K 0,010 - K/W thCK 150 °C vj max T -40 - 125 °C vjop T -40 - 125 °C stg 425 2 340 g BSM200GB170DLC_3.xls ...

Page 4

... BSM 200 GB 170 DLC 15V GE Tvj = 25°C Tvj = 125°C 1,5 2,0 2,5 3,0 V [V] CE VGE = 19V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 1,5 2,0 2,5 3,0 V [ 3,5 4,0 4,5 5 125°C vj 3,5 4,0 4,5 5,0 BSM200GB170DLC_3.xls ...

Page 5

... Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 400 350 300 250 200 150 100 50 0 0,0 0,5 BSM 200 GB 170 DLC Tvj = 25°C Tvj = 125° [V] GE Tvj = 25°C Tvj = 125°C 1,0 1,5 2,0 V [ 20V 2,5 3,0 BSM200GB170DLC_3.xls ...

Page 6

... Switching losses (typical) 200 180 160 140 120 100 BSM 200 GB 170 DLC off ±15V =7,5W gon goff 150 200 250 I [ ±15V 200A , Eoff Eon Erec [ rec C = 900V 125° Eoff Eon Erec 300 350 400 = off G rec G = 900V , T = 125° BSM200GB170DLC_3.xls ...

Page 7

... (t) thJC Zth:Diode Zth:IGBT 0 8,37 24,21 36,07 0,0047 0,0356 0,0613 27,92 55,32 55,32 0,0062 0,0473 0,0473 V = ±15V IC,Modul IC,Chip 600 800 1000 1200 V [ 6,35 0,4669 11,45 0,2322 = 7,5 Ohm 125° 1400 1600 1800 BSM200GB170DLC_3.xls ...

Page 8

... Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC 8(8) BSM200GB170DLC_3.xls ...

Page 9

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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