FZ2400R17KE3_B9 Infineon Technologies, FZ2400R17KE3_B9 Datasheet - Page 7

• Manufacturer Part Number: FZ2400R17KE3_B9
• Description: IGBT Modules N-CH 1.7KV 3.45KA
• Manufacturer: Infineon Technologies

Specifications of FZ2400R17KE3_B9

• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Triple
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 3450 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM190
• Ic (max): 2,400.0 A
• Vce(sat) (typ): 2.0 V
• Technology: IGBT3
• Housing: IHM 190 mm
• Lead Free Status / RoHS Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
FZ2400R17KE3_B9
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Vorläufige Daten
preliminary data