BSM400GA120DN2 Infineon Technologies, BSM400GA120DN2 Datasheet - Page 7

• Manufacturer Part Number: BSM400GA120DN2
• Description: IGBT Modules 1200V 400A SINGLE
• Manufacturer: Infineon Technologies

Specifications of BSM400GA120DN2

• Configuration: Single
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 550 A
• Power Dissipation: 2700 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 62MM
• Lead Free Status / RoHS Status: Compliant

BSM 400 GA 120 DN2
Typ. switching time
I = f (I
Typ. switching losses
E = f (I
par.: V
par.: V
E
t
mWs
10
10
10
10
250
150
100
C
ns
50
C
) , inductive load , T
CE
CE
0
4
3
2
1
) , inductive load , T
0
0
= 600 V, V
= 600 V, V
100 200 300 400 500 600 700
100 200 300 400 500 600 700
GE
GE
= ± 15 V, R
= ± 15 V, R
j
j
= 125°C
= 125°C
G
G
= 2.7
= 2.7
I
I
C
C
A
A
tdoff
tr
tdon
tf
Eon
Eoff
900
900
7
Typ. switching time
t = f (R
Typ. switching losses
E = f (R
par.: V
par.: V
E
t
mWs
10
10
10
10
250
150
100
ns
50
G
CE
CE
0
4
3
2
1
G
) , inductive load , T
0
0
) , inductive load , T
= 600 V, V
= 600 V, V
5
5
10
10
GE
GE
= ± 15 V, I
= ± 15 V, I
15
15
j
j
= 125°C
= 125°C
20
20
C
C
= 400 A
= 400 A
Oct-30-1997
R
R
G
G
tdoff
tdon
tr
tf
Eon
Eoff
30
30