BSM400GA120DN2S Infineon Technologies, BSM400GA120DN2S Datasheet - Page 6

• Manufacturer Part Number: BSM400GA120DN2S
• Description: IGBT Transistors 1200V 400A SINGLE
• Manufacturer: Infineon Technologies

Specifications of BSM400GA120DN2S

• Configuration: Single
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 4
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 400 A
• Power Dissipation: 2700 W
• Maximum Operating Temperature: + 150 C
• Package / Case: IS6a ( 62 mm )-4
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Ic (max): 400.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 62 mm
• Lead Free Status / RoHS Status: Compliant

BSM 400 GA 120 DN2
Typ. gate charge
V
parameter: I
Reverse biased safe operating area
I
I
Cpuls
parameter: V
Cpuls
V
GE
GE
I
C
= (Q
= f(V
2.5
1.5
1.0
0.5
0.0
20
16
14
12
10
V
8
6
4
2
0
0
0
di/dt = 1000A/µs
Gate
CE
200
C puls
400
)
GE
)
,
3000A/µs
5000A/µs
= ± 15 V, t
T
400
= 400 A
j
800
= 150°C
600
1200
600 V
800 1000 1200
p
1600
1 ms, L < 20 nH
2000
800 V
nC
Q
V
V
Gate
CE
2800
1600
6
Typ. capacitances
C = f (V
Short circuit safe operating area
I
I
parameter: V
Csc
parameter: V
Csc
C
/I
C
= f(V
10
10
10
10
nF
12
-1
8
6
4
2
0
2
1
0
CE
0
0
CE
di/dt = 1000A/µs
° allowed number of
° time between short
short circuit: <1000
circuit: >1s
)
) , T
200
5
GE
GE
3000A/µs
5000A/µs
j
= ± 15 V, t
= 150°C
400
= 0 V, f = 1 MHz
10
600
15
800 1000 1200
20
SC
25
10 µs, L < 20 nH
30
Oct-30-1997
V
V
V
V
CE
CE
Ciss
Coss
Crss
1600
40