BSM75GB170DN2 Infineon Technologies, BSM75GB170DN2 Datasheet - Page 8

• Manufacturer Part Number: BSM75GB170DN2
• Description: IGBT Modules N-CH 1.7KV 110A
• Manufacturer: Infineon Technologies

Specifications of BSM75GB170DN2

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 110 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 34MM
• Ic (max): 75.0 A
• Vce(sat) (typ): 3.4 V
• Technology: IGBT2 Standard
• Housing: 34 mm
• Lead Free Status / RoHS Status: Compliant

BSM 75 GB 170 DN2
Forward characteristics of fast recovery
reverse diode
parameter: T
I
F
150
130
120
110
100
90
80
70
60
50
40
30
20
10
A
0
0.0
0.5
j
I
F
1.0
= f(V
1.5
F
)
2.0
T
j
=125°C
2.5
T
j
=25°C
V
V
F
3.5
8
Transient thermal impedance
Z
parameter: D = t
Z
thJC
th JC
K/W
10
10
10
10
10
= (t
-1
-2
-3
-4
0
10
-5
p
)
single pulse
10
p
-4
/ T
10
-3
10
-2
Diode
D = 0.50
10
Oct-27-1997
t
-1
p
0.20
0.10
0.05
0.02
0.01
s
10
0