FZ400R12KE3B1 Infineon Technologies, FZ400R12KE3B1 Datasheet - Page 6

• Manufacturer Part Number: FZ400R12KE3B1
• Description: IGBT Modules N-CH 1.2KV 650A
• Manufacturer: Infineon Technologies

Specifications of FZ400R12KE3B1

• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Single Dual Collector Dual Emitter
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 650 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 62MM
• Ic (max): 400.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: 62 mm
• Lead Free Status / RoHS Status: Compliant

Technische Information / technical information
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