FZ800R33KF2C Infineon Technologies, FZ800R33KF2C Datasheet - Page 6

• Manufacturer Part Number: FZ800R33KF2C
• Description: IGBT Modules 3300V 800A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ800R33KF2C

• Configuration: Single
• Channel Type: N
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 3300 V
• Collector-emitter Saturation Voltage: 3.4 V
• Continuous Collector Current At 25 C: 1300 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 9.6 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 800.0 A
• Vce(sat) (typ): 3.4 V
• Technology: IGBT2 Standard
• Housing: IHV 130 mm
• Lead Free Status / RoHS Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
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&
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%USj * W3gX
NC54 * ";J P; -./ * "2
NC54 * ";J P; -./ * "2
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NC54 * ";J P; -./ * "2
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'
q@Kb. * W X
q@Kb. * W X
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1600
1400
1200
1000
800
600
400
200
100
0,1
10
0
1
0,001
0
BG
BG
BG
BG
200
1
1
1
1
%USj
q@Kb. 1
0,01
400
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B
B
B
B
600
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1
1
1
1
# W
# W
# W
# W
800
Ov$E Bw
0,1
W
W
W
W
Ov w
v w
FZ800R33KF2C
1000 1200 1400 1600
B
B
B
B
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;
X
X
X
X
X
X
X
X
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#
#
#
#
J
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10
6
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&
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3g * 2
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1600
1400
1200
1000
2000
1800
1600
1400
1200
1000
800
600
400
200
800
600
400
200
0
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
0
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7
7
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500
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1
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1000
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B
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1
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1
Vorläufige Daten
preliminary data
1500
NC vPw
-< v-w
B
B
B
B
# W
# W
# W
# W
W
W
W
W
2000
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W&x7X
W&x7X
W&x7X
X
X
X
X
X
X
X
X
# W&x7X
# W&x7X
# W&x7X
# W&x7X
2500
3000
3500