FF150R12ME3G Infineon Technologies, FF150R12ME3G Datasheet - Page 6

• Manufacturer Part Number: FF150R12ME3G
• Description: IGBT Modules N-CH 1.2KV 200A
• Manufacturer: Infineon Technologies

Specifications of FF150R12ME3G

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 200A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Continuous Collector Current At 25 C: 200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 695 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoDUAL-3
• Ic (max): 150.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: EconoDUAL™ 3
• Lead Free Status / RoHS Status: Compliant

! /
! /
MB43 & 0
MB43 & 0
#
#
~>Ja+ & V X
~>Ja+ & V X
! /
! /
MB43 & 0
MB43 & 0
#
#
~>Ja+ & V X
~>Ja+ & V X
=
=
=
=
TQh & V2fX
TQh & V2fX
TQh & V2fX
TQh & V2fX
'4'%
'4%
/ "
/ "
/ "
/ "
)'
%7
%5
%3
%)
%'
*
*
7
5
3
)
'
%
'4''%
'
/ / / /
O1 *+, & ?
O1 *+, & ?
O1 *+, & ?
O1 *+, & ?
A F
A F
A F
A F
'
.
.
.
.
~>Ja+ .
TQh1 #$% &
5'
'4'%
=
=
=
=
A
A
A
A
6'
*
*
*
*
Np DAr
Np r
/
/
/
/
'()
%)' %&' %7' )%' )3' )8'
#
2f p6r
.
.
.
.
V
V
V
V
'4%
1
1
V
V
V
V
p r
1
1
A
A
A
A
X
X
X
X
/X
/X
/X
/X
%&'(%)
/
/
/
/
1
1 '
%
00
1 @0?
1
#
%'
''
5
! /
! /
! /
! /
2f & ' 61 *+, & ?
2f & ' 61 *+, & ?
2f & ' 61 *+, & ?
2f & ' 61 *+, & ?
i#) #
i#) #
i#) #
i#) #
i#)
i#)
i#)
i#)
M & V#X
M & V#X
M & V#X
M & V#X
=
=
=
=
%'''''
TQh & VMBX
TQh & VMBX
TQh & VMBX
TQh & VMBX
%''''
%'''
%''
/ "
/ "
/ "
/ "
%7
%5
%3
%)
%'
#
7
5
3
)
'
'
'
)'
.
.
.
.
M>•|
TQh1 #$% &
%'
/
/
/
/
3'
A
A
A
A
*
*
*
*
5'
/
/
/
/
'()
V
V
V
V
)'
#+ p()r
MB pOr
V
V
V
V
7'
V
V
V
V
V
V
V
V
/X
/X
/X
/X
%''
'
X
X
X
X
/X
/X
/X
/X
X
X
X
X
%)'
3'
%3'
%5'
&'