DF300R12KE3 Infineon Technologies, DF300R12KE3 Datasheet - Page 6

• Manufacturer Part Number: DF300R12KE3
• Description: IGBT Transistors 1200V 300A DUAL
• Manufacturer: Infineon Technologies

Specifications of DF300R12KE3

• Configuration: Single
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 300 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1470 W
• Maximum Operating Temperature: + 125 C
• Package / Case: IS5a ( 62 mm )-5
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Ic (max): 300.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: 62 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
Technische Information / technical information
90
80
70
60
50
40
30
20
10
180
160
140
120
100
0
80
60
40
20
0
0
0
DF300R12KE3
100
4
Eon
Eoff
Erec
Eon
Eoff
Erec
8
200
6 (8)
V
V
E
E
12
GE
GE
on
on
I
=±15V, R
=±15V, I
R
C
300
= f (I
= f (R
G
[A]
[ ]
C
16
G
) , E
C
G
) , E
=300A, V
=2,4 , V
off
400
off
= f (I
= f (R
CE
20
CE
=600V, T
=600V, T
C
) , E
G
) , E
500
rec
vj
DB_DF300R12KE3_3.0
24
vj
=125°C
=125°C
rec
= f (I
= f (R
C
)
2002-10-02
600
28
G
)