FS10R12VT3 Infineon Technologies, FS10R12VT3 Datasheet - Page 2

• Manufacturer Part Number: FS10R12VT3
• Description: IGBT Modules N-CH 1.2KV 16A
• Manufacturer: Infineon Technologies

Specifications of FS10R12VT3

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 16 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EASY750
• Ic (max): 10.0 A
• Vce(sat) (typ): 1.9 V
• Technology: IGBT3
• Housing: EasyPACK 750
• Lead Free Status / RoHS Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
8
1
1+
8
1
LS !
$
7
c
h
=
!
#
#
9
=
?D # =
9U
#
?D # =
$
$
!
!
9
#
9
9
=
2 a
2
8
#
!
%&' ( )*+
,; (
,; ( 6
,@. ( 0) ,
,; ( 6
,@. ( 0) ,
,; ( 6
,@. ( 0) ,
d:FE>P ( 0 ?BV#` X B
: ( 0 #
g ( 0 72 ,@. (
g ( 0 72 ,@. (
g ( 0 72
g ( 0 72
g ( 0 72
FS10R12VT3
1
1
,2 : ( 0 # 2 %&' ( 0 )*+
,
,
,
B
gB
gB
gB
( 6) 7BK
( 6) 7BK
( 6) 7BK
,
,
deTPFEP ( 0 ?BV#` X
2
%&' ( )*+
%&' ( 0 )*+
%&' ( )*+
%&' ( 0 )*+
%&' ( )*+
%&' ( 0 )*+
%&' ( )*+
%&' ( 0 )*+
L>I-f
,;;<
L>Ib-
"TPi
g;<
,g
JT
;<
h
Vorläufige Daten
preliminary data
g
#
0
HH2
026)
026)
062
062)
02
0
2
2H
26
2 )
2Q
# C
20
2)
7h
K+
K+
#\
#\
,
7
7
,
,
7
7
B?
B?