BSM100GD60DLC Infineon Technologies, BSM100GD60DLC Datasheet - Page 6

• Manufacturer Part Number: BSM100GD60DLC
• Description: IGBT Modules 600V 100A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of BSM100GD60DLC

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 130A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Continuous Collector Current At 25 C: 130 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 430 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 3A
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
5,0
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
0
0
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
20
1
40
2
Eon
Eoff
Erec
BSM 100 GD 60 DLC
60
3
80
4
6 (8)
R
I
C
100
G
E
I
[A]
5
C
[ ]
= 100A , V
on
E
= f (R
R
G,on
on
= f (I
120
= 2,2
CC
6
G
= 300V , T
), E
C
= = = = R
), E
off
G,off
140
= f (R
= 2,2 , V
off
7
vj
= 125°C
= f (I
G
), E
CC
C
160
), E
= 300V, T
8
rec
rec
= f (R
= f (I
vj
180
= 125°C
Eon
Eoff
Erec
9
G
C
)
)
BSM 100 GD 60 DLC
200
10
2000-02-08