BSM200GA170DLC Infineon Technologies, BSM200GA170DLC Datasheet - Page 7
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BSM200GA170DLC
Manufacturer Part Number
BSM200GA170DLC
Description
IGBT Modules N-CH 1.7KV 400A
Manufacturer
Infineon Technologies
Datasheet
1.BSM200GA170DLC.pdf
(9 pages)
Specifications of BSM200GA170DLC
Configuration
Single Dual Emitter
Channel Type
N
Collector-emitter Voltage
1.7kV
Gate To Emitter Voltage (max)
±20V
Pin Count
4
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1700 V
Continuous Collector Current At 25 C
400 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
62MM
Ic (max)
200.0 A
Vce(sat) (typ)
2.6 V
Technology
IGBT2 Low Loss
Housing
62 mm
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM200GA170DLC
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
BSM200GA170DLC
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSM200GA170DLC
Quantity:
50
IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,001
0,01
0,1
1
450
400
350
300
250
200
150
100
0,001
50
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
0
Transienter Wärmewiderstand
Transient thermal impedance
r
r
i
i
0
[K/kW]
[K/kW]
i
i
[sec]
[sec]
i
200
: IGBT
: IGBT
: Diode
: Diode
0,01
IC,Modul
IC,Chip
BSM 200 GA 170 DLC
400
600
0,0047
0,0062
26,06
7,25
1
0,1
V
800
7(8)
CE
[V]
0,0356
0,0473
20,98
51,63
1000
2
t [sec]
Z
1
thJC
1200
= f (t)
R
g
= 7,5 Ohm, T
0,0613
0,0473
31,26
51,63
Zth:Diode
Zth:IGBT
3
1400
10
vj
= 125°C
1600
0,4669
0,2322
10,69
5,5
4
1800
100
BSM200GA170DLC