FB10R06KL4G_B1 Infineon Technologies, FB10R06KL4G_B1 Datasheet - Page 10

• Manufacturer Part Number: FB10R06KL4G_B1
• Description: IGBT Modules N-CH 600V 15A
• Manufacturer: Infineon Technologies

Specifications of FB10R06KL4G_B1

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 15 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EASY2
• Ic (max): 10.0 A
• Vce(sat) (typ): 1.95 V
• Technology: IGBT2 Low Loss
• Housing: EasyPIM™ 2
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / technical information
100000
10000
1000
20
18
16
14
12
10
100
8
6
4
2
0
0,00
Durchlaßkennlinie der Gleichrichterdiode (typisch)
forward characteristic of rectifier diode (typical)
0
NTC- Temperaturkennlinie (typisch)
NTC- temperature characteristic (typical)
20
Tj = 25°C
Tj = 150°C
0,20
40
FB10R06KL4GB1
0,40
60
T
V
C
F
10(12)
[°C]
[V]
Rtyp
0,60
R = f (T)
80
0,80
100
I
F
= f (V
F
)
120
Vorläufig
preliminary
1,00
140
1,20