FZ1600R12KL4C Infineon Technologies, FZ1600R12KL4C Datasheet - Page 5

• Manufacturer Part Number: FZ1600R12KL4C
• Description: IGBT Modules 1200V 1600A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ1600R12KL4C

• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Dual Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 2450 A
• Gate-emitter Leakage Current: 600 nA
• Power Dissipation: 10 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 1,600.0 A
• Vce(sat) (typ): 2.1 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
3200
2800
2400
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1600
1200
3200
2800
2400
2000
1600
1200
800
400
800
400
0
0
0,0
5
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
6
0,5
Tj = 25°C
Tj = 125°C
FZ 1600 R 12 KL4C
7
Tj = 25°C
Tj = 125°C
1,0
8
V
V
5(8)
GE
F
1,5
[V]
[V]
9
I
C
V
CE
= f (V
2,0
= 20V
10
GE
)
2,5
I
F
11
= f (V
F
Seriendatenblatt_FZ1600R12KL4C
)
3,0
12