FZ1800R12KL4C Infineon Technologies, FZ1800R12KL4C Datasheet - Page 7

• Manufacturer Part Number: FZ1800R12KL4C
• Description: IGBT Modules 1200V 1800A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ1800R12KL4C

• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Triple Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 2850 A
• Gate-emitter Leakage Current: 600 nA
• Power Dissipation: 11.4 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM190
• Ic (max): 1,800.0 A
• Vce(sat) (typ): 2.1 V
• Technology: IGBT2 Low Loss
• Housing: IHM 190 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,001
0,01
0,1
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
0,001
4200
3600
3000
2400
1800
1200
600
0
Transienter Wärmewiderstand
Transient thermal impedance
ri [K/kW]
ri [K/kW]
0
i
: IGBT
: IGBT
: Diode
: Diode
IC,Modul
IC,Chip
200
0,01
FZ 1800 R 12 KL4C
400
0,00006
0,00014
0,1
0,19
0,37
1
7(8)
600
V
0,0187
0,0218
CE
3,50
5,37
V
800
2
GE
t [sec]
[V]
1
Z
= +15V, R
thJC
= f (t)
g
= 0,51 , T
1000
0,080
0,503
6,44
3,35
3
10
vj
= 125°C
1200
Zth:Diode
Zth:IGBT
vorläufige Daten
preliminary data
14,92
0,87
0,50
0,06
Datenblatt_FZ1800R12KL4C.xls
4
1400
100