BSM35GP120G Infineon Technologies, BSM35GP120G Datasheet - Page 5

• Manufacturer Part Number: BSM35GP120G
• Description: IGBT Modules 1200V 35A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM35GP120G

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.4 V
• Continuous Collector Current At 25 C: 45 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM3
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
0
0
Ausgangskennlinienfeld Wechselr. (typisch)
Output characteristic Inverter (typical)
Ausgangskennlinienfeld Wechselr. (typisch)
Output characteristic Inverter (typical)
0,5
0,5
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
1
1
Tj = 25°C
Tj = 125°C
1,5
1,5
BSM35GP120G
2
V
2
V
CE
CE
5(11)
[V]
[V]
2,5
2,5
3
3
I
C
V
I
T
C
GE
vj
= f (V
= f (V
= 125°C
= 15 V
3,5
3,5
CE
CE
)
)
4
4
4,5
4,5
DB-PIM-10 (2).xls
5
5