SMBT2222AE6327XT Infineon Technologies, SMBT2222AE6327XT Datasheet - Page 6

• Manufacturer Part Number: SMBT2222AE6327XT
• Description: Transistor, NPN, Switching, 40 V(CEO), 6 V(EBO), 600 mA, SOT23
• Manufacturer: Infineon Technologies
• Type: Switchingr

Specifications of SMBT2222AE6327XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage(max): 75V
• Emitter-base Voltage (max): 6V
• Collector Current (dc) (max): 600mA
• Power Dissipation: 330mW
• Frequency (max): 300MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Current, Collector: 600 mA
• Current, Gain: 100
• Frequency: 300 MHz
• Polarity: NPN
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 75 V
• Voltage, Collector To Emitter: 40 VDC
• Voltage, Collector To Emitter, Saturation: 1 V
• Voltage, Emitter To Base: 6 V
• Lead Free Status / RoHS Status: Compliant

t
Total power dissipation P
Delay time t
Rise time t
d
t ,
r
mW
10
10
10
360
300
270
240
210
180
150
120
ns
5
5
90
60
30
0
3
2
1
10
0
SMBT 2222/A
V
0
t
BE
r
15
= 2 V
r
d
=
V
30
BE
=
5
= 0 V
(I
45
t
C
(I
d
10
)
C
t
r
t
60
1
)
d
V
BE
75
= 5 V
5
90 105 120
tot
V
h
10
CC
FE
= (T
2
= 30 V
= 10
mA
C
S
EHP00744
)
T
°C
5
S
150
10
3
6
P
P
t t ,
Permissible Pulse Load
P
Storage time t
Fall time t
s
tot max
tot
totmax
DC
f
10
10
10
ns
10
10
10
10
5
5
5
5
5
1
3
2
10
10
/P
3
2
1
0
SMBT 2222/A
SMBT 2222/A
1
-6
totDC
f
= (I
SMBT2222A/MMBT2222A
10
h
=
-5
FE
stg
C
= 10
)
= (I
10
(t
5
p
-4
)
D
t
f
t
C
s
=
10
)
t
T
10
p
2
-3
h
h
FE
FE
t
p
10
= 10
= 20
-2
mA
2007-04-19
T
D =
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
C
t
EHP00745
s
p
EHP00740
5
10
10
3
0