SST112-T1-E3 Vishay, SST112-T1-E3 Datasheet - Page 4
![N CHANNEL JFET, -55V, SOT-23](/photos/22/17/221705/4472336_sml.jpg)
SST112-T1-E3
Manufacturer Part Number
SST112-T1-E3
Description
N CHANNEL JFET, -55V, SOT-23
Manufacturer
Vishay
Specifications of SST112-T1-E3
Channel Type
N
Configuration
Single
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Breakdown Voltage Vbr
-55V
Gate-source Cutoff Voltage Vgs(off) Max
-5V
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Peak Reflow Compatible (260 C)
Yes
Leaded Process Compatible
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SST112-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
J/SST111 Series
Vishay Siliconix
www.vishay.com
7-4
0.1 pA
100 pA
10 nA
10 pA
1 pA
100
100
1 nA
0.1
10
10
1
1
10
100
0
V
I
T
D
V
A
DG
= 10 mA
DS
T
T
Common-Gate Forward Admittance
= 25_C
A
A
= 10 V
= 10 V
= 125_C
= 25_C
Noise Voltage vs. Frequency
6
100
I
D
V
Gate Leakage Current
DG
200
= 10 mA
f – Frequency (MHz)
– Drain-Gate Voltage (V)
f – Frequency (Hz)
12
10 mA
I
D
–g
= 1 mA
I
D
fg
1 k
= 10 mA
1 mA
18
I
GSS
500
10 k
I
GSS
@ 125_C
b
24
fg
@ 25_C
1 mA
g
fg
100 k
1000
_
30
0.01
100
0.1
Forward Transconductance and Output Conductance
1.0
0.1
50
40
30
20
10
10
10
1
0
100
100
0
V
I
T
g
V
V
I
T
D
D
A
fs
A
DG
GS
DG
= 10 mA
= 10 mA
Common-Gate Reverse Admittance
= 25_C
= 25_C
and g
V
= 0 V, f = 1 kHz
= 10 V
Common-Gate Input Admittance
= 10 V
–g
vs. Gate-Source Cutoff Voltage
GS(off)
b
–2
ig
rg
os
–b
200
@ V
– Gate-Source Cutoff Voltage (V)
200
rg
f – Frequency (MHz)
DS
g
f – Frequency (MHz)
fs
–4
= 20 V
–6
S-04028—Rev. E, 04-Jun-01
g
+g
Document Number: 70232
os
500
500
rg
g
ig
–8
1000
1000
–10
500
250
0