SST112-T1-E3 Vishay, SST112-T1-E3 Datasheet - Page 5
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SST112-T1-E3
Manufacturer Part Number
SST112-T1-E3
Description
N CHANNEL JFET, -55V, SOT-23
Manufacturer
Vishay
Specifications of SST112-T1-E3
Channel Type
N
Configuration
Single
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Breakdown Voltage Vbr
-55V
Gate-source Cutoff Voltage Vgs(off) Max
-5V
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Peak Reflow Compatible (260 C)
Yes
Leaded Process Compatible
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SST112-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
V
R
I
D(on)
GS(L)
L
*Non-inductive
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
*
100
0.1
40
32
24
16
10
8
0
1
100
0
V
I
T
V
D
A
DG
GS(off)
= 10 mA
= 25_C
J/SST111
Common-Gate Output Admittance
= 10 V
0.2
12 mA
800 W
–12 V
= –4 V
V
DS
Output Characteristics
200
– Drain-Source Voltage (V)
f – Frequency (MHz)
0.4
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
J/SST112
1600 W
6 mA
–7 V
b
0.6
og
500
g
og
0.8
V
J/SST113
GS
3200 W
3 mA
= 0 V
–5 V
–0.5
–1.0
–1.5
–2.0
–2.5
–3.0
1000
1.0
_
V
V
GS(H)
GS(L)
100
100
80
60
40
20
80
60
40
20
0
0
0
0
Scope
V
V
V
GS(off)
GS
GS(off)
25_C
125_C
–1
= –4 V
2
= –4 V
T
A
V
V
Output Characteristics
Transfer Characteristics
DS
GS
= –55_C
– Drain-Source Voltage (V)
– Gate-Source Voltage (V)
1
51
kW
J/SST111 Series
–2
W
4
Vishay Siliconix
51
W
–3
6
V
DD
V
DS
R
www.vishay.com
= 20 V
V
L
GS
–4
8
= 0 V
OUT
–0.5
–1.0
–1.5
–2.0
–2.5
7-5
10
–5