PN4392 T/R NXP Semiconductors, PN4392 T/R Datasheet - Page 3

• Manufacturer Part Number: PN4392 T/R
• Manufacturer: NXP Semiconductors

Specifications of PN4392 T/R

• Channel Type: N
• Configuration: Single
• Gate-source Voltage (max): -40V
• Drain-gate Voltage (max): -40V
• Drain-source Volt (max): 40V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Philips Semiconductors
THERMAL RESISTANCE
STATIC CHARACTERISTICS
T
April 1989
From junction to ambient in free air
Reverse gate current
Drain cut-off current
Drain saturation current
Gate-source breakdown voltage
Gate-source cut-off voltage
Drain-source on-resistance
Drain-source on-voltage
j
V
= 25 C unless otherwise specified
N-channel silicon field-effect transistors
T
I
V
V
V
V
DS
D
V
V
V
V
V
V
V
V
I
amb
GS
GS
GS
DS
G
= 1 mA; V
GS
GS
GS
GS
GS
GS
GS
GS
= 20 V; I
= 1 A; V
= 0; I
= 0; I
= 0; I
= 20 V; V
= 100 C
= 20 V; V
= 20 V; V
= 12 V
= 7 V
= 5 V
= 12 V
= 7 V
= 5 V
D
D
D
= 12 mA
= 6 mA
= 3 mA
D
GS
DS
= 1 nA
GS
V
V
T
DS
DS
= 0
amb
= 0
DS
DS
= 0
= 0
= 0
= 20 V
= 20 V;
= 100 C
I
I
I
I
I
I
I
R
V
V
V
DSX
DSX
DSX
DSX
DSX
DSX
DSS
I
I
V
V
DS on
DS on
DS on
DS on
GSS
GSS
(BR)GSS
GS off
3
R
th j-a
max.
max.
max.
max.
max.
max.
max.
max.
min.
max.
min.
min.
max.
max.
max.
max.
max.
PN4391 PN4392 PN4393
=
200
200
150
1.0
1.0
4.0
0.4
50
40
10
30
PN4391 to 4393
200
200
100
1.0
1.0
2.0
5.0
0.4
25
40
60
350
Product specification
200 nA
200 nA
100
1.0 nA
1.0 nA
0.5 V
3.0 V
0.4 V
60 mA
40 V
5 mA
K/W
nA
nA
nA
nA
V
V