BF861C NXP Semiconductors, BF861C Datasheet - Page 3
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BF861C
Manufacturer Part Number
BF861C
Description
Manufacturer
NXP Semiconductors
Datasheet
1.BF861C.pdf
(13 pages)
Specifications of BF861C
Channel Type
N
Configuration
Single
Gate-source Voltage (max)
25V
Drain-gate Voltage (max)
25V
Drain-source Volt (max)
25V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BF861C
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Philips Semiconductors
6. Thermal characteristics
7. Characteristics
9397 750 13395
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 6:
[1]
Table 7:
T
Symbol
P
T
T
Symbol
R
Symbol
V
j
Fig 1. Power derating curve.
stg
j
tot
(BR)GSS
th(j-a)
= 25 C; V
Device mounted on an FR4 printed-circuit board.
Device mounted on an FR4 printed-circuit board.
Limiting values
Thermal characteristics
Characteristics
DS
Parameter
total power dissipation
storage temperature
operating junction
temperature
Parameter
thermal resistance from junction
to ambient
Parameter
gate-source
breakdown voltage
= 8 V; V
Rev. 04 — 24 September 2004
(mW)
GS
P
tot
300
200
100
= 0 V unless otherwise specified.
0
…continued
0
BF861A; BF861B; BF861C
Conditions
I
G
= 1 A
50
Conditions
up to T
Conditions
amb
100
= 25 C
T
amb
( C)
mrc166
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
Min
150
25
Min
-
-
N-channel junction FETs
65
[1]
Typ
-
Typ
500
Max
250
+150
150
Max
-
Unit
K/W
Unit
mW
Unit
V
C
C
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