BF545B NXP Semiconductors, BF545B Datasheet - Page 3
![TRANSISTOR, JFET, N, RF, SOT-23](/photos/31/41/314175/sot23_sml.jpg)
BF545B
Manufacturer Part Number
BF545B
Description
TRANSISTOR, JFET, N, RF, SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.BF545B.pdf
(15 pages)
Specifications of BF545B
Channel Type
N
Configuration
Single
Gate-source Voltage (max)
-30V
Drain-gate Voltage (max)
-30V
Drain-source Volt (max)
30V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Transistor Type
JFET
Breakdown Voltage Vbr
30V
Zero Gate Voltage Drain Current Idss
6mA To 15mA
Gate-source Cutoff Voltage Vgs(off) Max
7.5V
Power Dissipation Pd
250mW
Transistor Case
RoHS Compliant
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
5. Limiting values
6. Thermal characteristics
9397 750 13391
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 6:
[1]
Symbol
V
V
V
I
P
T
T
Symbol
R
G
Fig 1. Power derating curve.
stg
j
DS
GSO
GDO
tot
th(j-a)
Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm
Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm
Parameter
thermal resistance from junction to
ambient
Limiting values
Thermal characteristics
Parameter
drain-source voltage (DC)
gate-source voltage
gate-drain voltage (DC)
forward gate current (DC)
total power dissipation
storage temperature
junction temperature
2
2
.
.
(mW)
P
tot
Rev. 03 — 5 August 2004
400
300
200
100
0
0
BF545A; BF545B; BF545C
50
N-channel silicon junction field-effect transistors
Conditions
open drain
open source
T
amb
100
Conditions
25 C
150
T
amb
mbb688
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
( C)
[1]
200
Min
-
-
-
-
-
-
65
[1]
Typ
500
Max
10
250
+150
150
30
30
30
Unit
K/W
Unit
V
V
V
mA
mW
C
C
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