BF545BT NXP Semiconductors, BF545BT Datasheet - Page 4

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BF545BT

Manufacturer Part Number
BF545BT
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF545BT

Channel Type
N
Configuration
Single
Gate-source Voltage (max)
-30V
Drain-gate Voltage (max)
-30V
Drain-source Volt (max)
30V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Compliant
Philips Semiconductors
7. Static characteristics
Table 7:
T
9397 750 13391
Product data sheet
Symbol
V
V
I
I
DSS
GSS
j
y
y
(BR)GSS
GSoff
= 25 C unless otherwise specified.
fs
os
Parameter
gate-source breakdown voltage
gate-source cut-off voltage
drain current
gate-source leakage current
forward transfer admittance
common source output
admittance
Static characteristics
Conditions
I
I
I
V
V
V
T
V
V
G
D
D
j
GS
GS
GS
GS
GS
BF545A
BF545B
BF545C
BF545A
BF545B
BF545C
= 200 A; V
= 1 A; V
= 125 C
= 1 A; V
Rev. 03 — 5 August 2004
= 0 V; V
= 20 V; V
= 20 V; V
= 0 V; V
= 0 V; V
DS
DS
DS
DS
DS
DS
= 15 V
DS
DS
= 15 V
= 15 V
= 15 V
BF545A; BF545B; BF545C
= 0 V
= 15 V
= 0 V
= 0 V;
N-channel silicon junction field-effect transistors
Min
2
6
12
-
-
3
-
30
0.4
1.6
3.2
0.4
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Typ
-
-
-
-
-
-
-
-
-
-
40
0.5
Max
-
6.5
15
25
6.5
-
2.2
3.8
7.8
7.5
1000
100
Unit
V
V
V
V
V
mA
mA
mA
pA
nA
mS
S
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