HMMC-1002 Avago Technologies US Inc., HMMC-1002 Datasheet - Page 3

• Manufacturer Part Number: HMMC-1002
• Manufacturer: Avago Technologies US Inc.

Specifications of HMMC-1002

• Operating Temperature (max): 125C
• Lead Free Status / RoHS Status: Compliant

3
Application
The HMMC-1002 is designed to be used as a gain con-
trol block in an ALC assembly. Because of its wide
dynamic range and return loss performance, the
HMMC-1002 may also be used as a broadband pulse
modulator or single-pole single-throw, non-reflective
switch.
Operation
The attenuation value of the HMMC-1002 is adjusted
by apply-ing negative voltage to V
tion setting, optimum VSWR is obtained by applying
negative voltage to V
to the gates of the shunt FETs sets the source-to-drain
resistance and establishes the attenuation level. Ap-
plying negative voltage (V
FETs optimizes the input and output match for dif-
ferent attenuation settings. In some applications, a
single setting of V
output match over the desired attenuation range (V
For any HMMC-1002 the values of V
so that the device attenuation versus voltage is mono-
tonic for both V
degrade the input and output return loss.
The attenuation and input/output match of the
HMMC-1002 may also be controlled using only a single
input voltage by utilizing the on-chip DC reference
circuit and the driver circuit shown in Figure 4. This
circuit optimizes VSWR for any attenuation setting.
Figure 1. HMMC-1002 Schematic.
RF
IN
50
1
1
and V
may provide sufficient input and
1
. Applying negative voltage (V
2
; however, this will slightly
1
) to the gates of the series
DC
IN
2
1
. At any attenua-
may be adjusted
V
1
50Ω RF Attenuator Circuit
500
1
2
).
)
500
Because of process variations, the values of V
R
performance is required. Typical values for these
elements are given. The ratio of the resistors R
R
sus voltage performance of the attenuator.
Assembly Techniques
GaAs MMICs are ESD sensitive. ESD preventive
measures must be employed in all aspects of storage,
handling, and assembly. MMIC ESD precautions,
handling considerations, die attach and bonding
methods are critical fac-Figure tors in successful
GaAs MMIC performance and reliability. Agilent ap-
plication note #54, “GaAs MMIC ESD, Die Attach and
Bonding Guidelines” provides basic information on
these subjects.
Additional References:
AN#31, “2 – 26.5 Variable Gain Amplifier Using
HMMC-5021/22/26 and HMMC-1002 GaAs MMIC
Components,” AN#37, “HMMC-1002 Attenuator:
Attenuation Control, “AN#44, “DC–50 GHz Variable
Attenuator: S-Parameters,” AN#45, “HMMC-1002
DC–50 GHz Variable Attenuator: Switching Speed
Limitations, and PN#10, “HMMC-1002 50 GHz Attenu-
ator 0–50 GHz Performance.”
REF
2
determines the sensitivity of the attenuation ver-
, and R
DC
OUT
L
are different for each wafer if optimum
V
2
500Ω DC Reference Circuit
50
1
RF
REF
and
OUT
,