MT41J128M8JP-125:G Micron Technology Inc, MT41J128M8JP-125:G Datasheet - Page 163

• Manufacturer Part Number: MT41J128M8JP-125:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J128M8JP-125:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (128M x 8)
• Speed: 800MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Table 78:
Table 79:
Table 80:
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_5.fm - Rev. F 11/08 EN
Figure and Page
Figure 111 on page 164
Figure 112 on page 164
Figure 113 on page 165
Figure 114 on page 166
Figure 115 on page 166
M9
0
0
0
0
1
1
1
1
M10
n/a
n/a
n/a
n/a
0
0
1
1
MR2 (R
MR1 (R
Mode Registers for R
Mode Registers for R
Timing Diagrams for Dynamic ODT
TT
M6
Notes:
0
0
1
1
0
0
1
1
TT
_
WR
_
NOM
)
M9
n/a
n/a
n/a
n/a
0
1
0
1
)
1. RZQ = 240Ω. If R
M2
0
1
0
1
0
1
0
1
Title
Dynamic ODT: ODT Asserted Before and After the WRITE, BC4
Dynamic ODT: Without WRITE Command
Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles,
BL8
Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4
Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4
TT
TT
_
_
NOM
WR
TT
R
Reserved
Reserved
_
RZQ/12
TT
(RZQ)
RZQ/4
RZQ/2
RZQ/6
RZQ/8
NOM
Off
_
NOM
Reserved
R
Dynamic ODT off: WRITE does not affect R
is used during WRITEs, only RZQ/2, RZQ/4, RZQ/6 are allowed
(RZQ)
RZQ/4
RZQ/2
TT
n/a
n/a
n/a
n/a
_
WR
163
Micron Technology, Inc., reserves the right to change products or specifications without notice.
R
Reserved
Reserved
(Ohms)
TT
120
Off
60
40
20
30
_
NOM
1Gb: x4, x8, x16 DDR3 SDRAM
On-Die Termination (ODT)
©2006 Micron Technology, Inc. All rights reserved.
Mode Restriction
Self refresh, write
Reserved
(Ohms)
TT
R
TT
Self refresh
_
120
n/a
n/a
n/a
n/a
60
NOM
R
_
TT
WR
n/a
n/a
n/a
_
NOM
.