MT46V8M16TG-75ZL Micron Technology Inc, MT46V8M16TG-75ZL Datasheet - Page 53
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MT46V8M16TG-75ZL
Manufacturer Part Number
MT46V8M16TG-75ZL
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V8M16TG-75ZL.pdf
(81 pages)
Specifications of MT46V8M16TG-75ZL
Lead Free Status / RoHS Status
Not Compliant
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Figure 26:
PDF: 09005aef816fd013/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 128Mb DDR: Rev. F; Core DDR: Rev. A 4/07 EN
Consecutive READ Bursts
Notes:
COMMAND
COMMAND
COMMAND
ADDRESS
ADDRESS
ADDRESS
DQS
DQS
DQS
1. DO n (or b) = data-out from column n (or column b).
2. BL = 4 or BL = 8 (if BL = 4, the bursts are concatenated; if BL = 8, the second burst interrupts
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order follow-
5. Shown with nominal
6. Example applies only when READ commands are issued to same device.
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
the first).
ing DO b.
Bank,
Bank,
READ
Col n
READ
Bank,
READ
Col n
Col n
T0
T0
T0
CL = 2
t
NOP
NOP
NOP
AC,
T1
T1
T1
CL = 2.5
t
DQSCK, and
CL = 3
53
Bank,
Col b
Bank,
Bank,
READ
Col b
Col b
READ
READ
T2
T2
T2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ.
DO
n
T2n
T2n
128Mb: x4, x8, x16 DDR SDRAM
DO
n
T3
NOP
T3
NOP
T3
NOP
DON’T CARE
DO
n
T3n
T3n
T3n
©2004 Micron Technology, Inc. All rights reserved.
T4
NOP
T4
T4
NOP
NOP
DO
b
TRANSITIONING DATA
T4n
T4n
T4n
DO
b
Operations
T5
NOP
T5
T5
NOP
NOP
DO
b
T5n
T5n
T5n
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