MT46V8M16TG-75ZL Micron Technology Inc, MT46V8M16TG-75ZL Datasheet - Page 65

• Manufacturer Part Number: MT46V8M16TG-75ZL
• Manufacturer: Micron Technology Inc

Specifications of MT46V8M16TG-75ZL

• Lead Free Status / RoHS Status: Not Compliant

Figure 37:
PDF: 09005aef816fd013/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 128Mb DDR: Rev. F; Core DDR: Rev. A 4/07 EN
Consecutive WRITE-to-WRITE
Notes:
t
DQSS (NOM)
COMMAND
ADDRESS
1. DI b (or n) = data-in from column b (or column n).
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. Three subsequent elements of data-in are applied in the programmed order following DI n.
4. An uninterrupted burst of 4 is shown.
5. Each WRITE command may be to any bank.
DQS
CK#
DM
DQ
CK
WRITE
Bank,
Col b
T0
t
DQSS
NOP
DI
T1
b
65
T1n
WRITE
Bank,
Col n
T2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T2n
128Mb: x4, x8, x16 DDR SDRAM
T3
NOP
DI
n
DON’T CARE
T3n
©2004 Micron Technology, Inc. All rights reserved.
T4
NOP
TRANSITIONING DATA
T4n
Operations
T5
NOP