MT46H64M16LFCK-5:A Micron Technology Inc, MT46H64M16LFCK-5:A Datasheet - Page 59

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MT46H64M16LFCK-5:A

Manufacturer Part Number
MT46H64M16LFCK-5:A
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46H64M16LFCK-5:A

Organization
64Mx16
Density
1Gb
Address Bus
14b
Access Time (max)
6.5/5ns
Maximum Clock Rate
200MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
130mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46H64M16LFCK-5:A TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 23: Consecutive READ Bursts
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 4, 8, or 16 (if 4, the bursts are concatenated; if 8 or 16, the second burst interrupts
3. Shown with nominal
4. Example applies only when READ commands are issued to same device.
the first).
OUT
n (or b) = data-out from column n (or column b).
CL = 2
NOP
NOP
T1
T1
CL = 3
T1n
D
t
READ
Bank,
n
READ
Bank,
OUT
Col b
Col b
AC,
T2
1
T2
59
t
DQSCK, and
D
n + 1
T2n
T2n
OUT
D
1Gb: x16, x32 Mobile LPDDR SDRAM
D
n + 2
OUT
n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
NOP
NOP
T3
OUT
T3
t
DQSQ.
D
Don’t Care
n + 1
T3n
D
n + 3
T3n
OUT
OUT
D
n + 2
OUT
D
T4
NOP
T4
NOP
OUT
b
D
n + 3
T4n
T4n
OUT
D
b + 1
OUT
Transitioning Data
© 2007 Micron Technology, Inc. All rights reserved.
READ Operation
D
T5
NOP
T5
NOP
D
b + 2
OUT
b
OUT
T5n
T5n
D
b + 1
D
b + 3
OUT
OUT

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