TSOP32438SS1F Vishay, TSOP32438SS1F Datasheet

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TSOP32438SS1F

Manufacturer Part Number
TSOP32438SS1F
Description
Manufacturer
Vishay
Datasheet

Specifications of TSOP32438SS1F

Lead Free Status / RoHS Status
Supplier Unconfirmed
DESCRIPTION
Si9122 is a dedicated half-bridge IC ideally suited to fixed
telecom applications where efficiency is required at low
output voltages (e.g. < 3.3 V). Designed to operate within the
fixed telecom voltage range of 33 to 72 V, the IC is capable
of controlling and driving both the low and high-side
switching devices of a half bridge circuit and also controlling
the switching devices on the secondary side of the bridge.
Due to the very low on-resistance of the secondary
MOSFETs, a significant increase in the efficiency can be
achieved as compared with conventional Schottky diodes.
Control of the secondary devices is by means of a pulse
transformer and a pair of inverters. Such a system has
efficiencies well in excess of 90 % even for low output
voltages. On-chip control of the dead time delays between
the primary and secondary synchronous signals keep
efficiencies high and prevent accidental destruction of the
power transformer. An external resistor sets the switching
frequency from 200 kHz to 625 kHz.
Si9122 has advanced current monitoring and control
circuitry which allow the user to set the maximum current in
the primary circuit. Such a feature acts as protection against
output shorting and also provides constant current into large
capacitive loads during start-up or when paralleling power
supplies. Current sensing is by means of a sense resistor on
the low-side primary device.
FUNCTIONAL BLOCK DIAGRAM
Document Number: 71815
S-80038-Rev. J, 14-Jan-08
with Integrated Secondary Synchronous Rectification Drivers
12 V to 72 V
V
C
IN_DET
L_CONT
500-kHz Half-Bridge DC/DC Controller
Si9122
SR
SR
BST
CS2
CS1
DH
EP
DL
LX
H
L
Figure 1.
FEATURES
APPLICATIONS
• 12 V to 72 V input voltage range
• Integrated half-bridge primary drivers
• Secondary synchronous signals with
• Voltage mode control
• Voltage feedforward compensation
• High voltage pre-regulator operates during start-up
• Current sensing on low-side primary device
• Frequency foldback eliminates constant current tail
• Advanced maximum current control during start-up and
• Low input voltage detection
• Programmable soft-start function
• Over temperature protections
• Network cards
• Power supply modules
(1 A drive capability)
programmable deadtime delay
shorted load
Synchronous
Rectifiers
V
CC
Opto Isolator
Vishay Siliconix
Amplifier
Error
1 V to 12 V Typ.
www.vishay.com
+
-
Si9122
V
V
REF
RoHS
COMPLIANT
OUT
+
-
1

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TSOP32438SS1F Summary of contents

Page 1

... Low input voltage detection • Programmable soft-start function • Over temperature protections APPLICATIONS • Network cards • Power supply modules BST CS2 CS1 Figure 1. Si9122 Vishay Siliconix RoHS COMPLIANT Synchronous Rectifiers Typ. V OUT Error Amplifier REF Opto Isolator www.vishay.com + - ...

Page 2

... Si9122 Vishay Siliconix TECHNICAL DESCRIPTION Si9122 is a voltage mode controller for the half-bridge topology. With 100 V depletion mode MOSFET capability, the Si9122 is capable of powering directly from the high voltage bus to V through an external PNP pass transistor may be powered through an external regulator directly through the V pin ...

Page 3

... C LOAD Analog Inputs Digital Inputs Reference Voltage Output Current Document Number: 71815 S-80038-Rev. J, 14-Jan-08 All voltages referenced to GND = 0 V Continuous 100 ms TSSOP-20 MLP65-20 b TSSOP-20 c MLP65-20 All voltages referenced to GND = 0 V Si9122 Vishay Siliconix Limit Unit 75 100 14.5 90 115 0.3 ...

Page 4

... Si9122 Vishay Siliconix a SPECIFICATIONS Parameter Symbol Reference (3 Output Voltage I Short Circuit Current SREF Load Regulation dVr/dir Power Supply Rejection PSRR Oscillator Accuracy ( OSC i F Max Frequency d F Foldback Frequency Error Amplifier I Input Bias Current Gain Bandwidth Power Supply Rejection PSRR Slew Rate ...

Page 5

... SRL Sourcing Sinking BST BST Sourcing Sinking Vishay Siliconix Limits - ° Min. Typ. Max. 7.4 9.1 10 °C 8.5 9.1 A 9.2 7.15 8 °C 8.1 8 7.35 8.05 8.85 350 550 720 200 3.13 3.3 3.46 0.23 0.3 0.35 160 130 50 350 ...

Page 6

... Si9122 Vishay Siliconix a SPECIFICATIONS Parameter Symbol Synchronous Rectifier (SRH, SRL) Drivers V Output High Voltage V Output Low Voltage t BBM1 t BBM2 f Break-Before-Make Time t BBM3 t BBM4 I Peak Output Source SOURCE I Peak Output Sink SINK Rise Time Fall Time Voltage Mode t d1DH Error Amplifier t d2DL ...

Page 7

... BBM1 BBM2 BBM1 Document Number: 71815 S-80038-Rev. J, 14-Jan-08 PWM PWM PWM BBM3 BBM4 BBM3 Return to: t BBM2 Figure 3. Si9122 Vishay Siliconix Time BST = MID V CC GND t BBM4 V CC GND Specification Table Rectification Timing Sequence Primary MOSFET Drivers Secondary MOSFET Drivers www.vishay.com 7 ...

Page 8

... Si9122 Vishay Siliconix PIN CONFIGURATION Si9122DQ (TSSOP-20 REG_COMP REF GND OSC INDET CS1 9 CS2 10 Top View ORDERING INFORMATION Lead (Pb)-free Part Number Si9122DQ-T1-E3 Si9122DLP-T1-E3 Eval Kit Si9122DB Issue 3 PIN DESCRIPTION Pin Number Name V 1 Input supply voltage for the start-up circuit ...

Page 9

... Feedback from the output of the switch mode supply charges V . During this period, and fully disconnects the pre-regulator, isolating switch mode operation. In the event of an over voltage condition shunt excessive current to GND. CC Vishay Siliconix IN Pre-Regulator + - 9 UVLO + - High-Side 8.8 V ...

Page 10

... Si9122 Vishay Siliconix Care needs to be taken if there is a delay prior to the external circuit feeding back to the V supply. To prevent excessive CC power dissipation within the advisable to use an external PNP device. A pin has been incorporated on the IC, (REG_COMP) to provide compensation when employing the external device. In this case the V ...

Page 11

... 150 100 mV V Figure 6 . Current Limit Circuit Vishay Siliconix INDET (3.3 V, 300 mV hysteresis), is achieved. This REF , and comparing this voltage with the IN - 0.3 V, the high-side driver 0.3 V. Thus, the CC divider must be set to accommodate IN operating voltage to avoid this condition. CC INDET is forced below the lower threshold, a minimum of ), the device will enter SHUTDOWN mode ...

Page 12

... Si9122 Vishay Siliconix TYPICAL CHARACTERISTICS 600 500 400 300 200 (kΩ) OSC F vs OSC OSC 10.0 9.5 9 mV/C 8.5 8.0 7 Temperature (°C) V vs. Temperature, V REG Temperature (°C) I vs. Temperature SS www.vishay.com > V INDET REF 75 100 125 150 = 100 125 3.300 3.295 3.290 3 ...

Page 13

... V 200 CC 150 100 200 400 V (mV SOURCE 200 400 V (mV) OH SRL, SRH I SOURCE Document Number: 71815 S-80038-Rev. J, 14-Jan- 100 600 800 vs 600 800 vs Si9122 Vishay Siliconix Temperature (°C) I vs. Temperature CC3 250 200 CC 150 100 200 400 600 V (mV vs SINK ...

Page 14

... Si9122 Vishay Siliconix TYPICAL CHARACTERISTICS 100 (kΩ) BBM t vs BBM BBM BBM1 BBM1 kΩ BBM BBM2 BBM2 Temperature (°C) t vs. Temperature, V BBM1 BBM4 kΩ 65 BBM BBM4 BBM3 BBM3 Temperature (°C) t vs. Temperature, V BBM3, 4 www.vishay.com 14 t BBM1 t BBM4 t BBM3 t BBM2 BBM1 BBM2 ...

Page 15

... INDET BBM4 BBM3 6.5 7.5 3.5 INDET 500 50 45 400 40 35 300 30 25 200 100 0.8 1.0 Si9122 Vishay Siliconix BBM1 BBM1 BBM1 BBM2 BBM2 BBM2 4.5 5.5 6.5 V (V) INDER t vs. V vs. V BBM1, 2 INDET BBM4 BBM4 BBM4 ...

Page 16

... Figure 11. Effective BBM - Measured On Secondary Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 17

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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