TFBS5711-TR1 Vishay, TFBS5711-TR1 Datasheet - Page 4

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TFBS5711-TR1

Manufacturer Part Number
TFBS5711-TR1
Description
Manufacturer
Vishay
Type
TX/RXr
Datasheet

Specifications of TFBS5711-TR1

Peak Wavelength
900nm
Angle Of Half Sensitivity
48°
Pulse Width
2us
Led Supply Voltage
-0.5 to 6.5V
Package Type
SMD
Fall Time
40/60ns
Rise Time
40/60ns
Dimensions
6x3.1x1.9
Operating Supply Voltage (typ)
3.3/5V
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
5.5V
Mounting
Surface Mount
Pin Count
6
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Data Rate
1.125Mbps
Lead Free Status / RoHS Status
Compliant
Electrical Characteristics
Transceiver
T
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
*)
**)
Optoelectronic Characteristics
Receiver
T
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Document Number 82634
Rev. 1.5, 03-Jul-06
Supply voltage
Dynamic supply current
Average dynamic supply
current, transmitting
Standby supply current
Operating temperature range
Output voltage low, RXD
Output voltage high, RXD
RXD to V
Input voltage low (TXD, SD)
Input voltage high (TXD, SD)
Input leakage current (TXD, SD) V
Controlled pull down current
Input capacitance (TXD, SD)
Minimum detection threshold
irradiance
Maximum detection threshold
irradiance
Logic LOW receiver input
irradiance
Rise time of output signal
Fall time of output signal
RXD pulse width of output signal,
default mode after power on
SIR ENDEC compatibility
mode
output signal
amb
amb
Standard illuminant A
The typical threshold level is 0.5 x V
= 25 °C, V
= 25 °C, V
*)
: RXD pulse width of
CC1
Parameter
Parameter
impedance
CC1
CC1
= V
= V
CC2
CC2
= 2.7 V to 5.5 V unless otherwise noted.
= 2.7 V to 5.5 V unless otherwise noted.
SD = High, T = 25 °C, E
SD, TXD = "0" to "1",
SD = Low, E
I
Cycle
SD = High, T = 25 °C,
E
SD = High, T = 85 °C, not
ambient light sensitive
C
I
I
CMOS level
0 < V
SD, TXD = "0" to "1",
V
IRED
OH
OH
9.6 kbit/s to 1152 kbit/s
λ = 850 nm - 900 nm
λ = 850 nm - 900 nm
10 % to 90 %, C
90 % to 10 %, C
input pulse length
t
Input pulse length
t
"Programming"
e
in
in
Load
PWopt
PWopt
= 1 klx
= 0.9 x V
> 0.7 V
= - 500 µA
= - 250 µA, C
CC1
= 500 mA, 25 % Duty
in
= 15 pF, I
> 200 ns
> 200 ns, see chapter
. It is recommended to use the specified min/max values to avoid increased operating current
< 0.15 V
Test Conditions
Test Conditions
*)
CC1
**)
e
CC1
= 1 klx
OL
CC1
Load
L
L
= 1 mA
= 15 pF
= 15 pF
= 15 pF
e
= 0 klx
Symbol
V
R
Symbol
V
V
I
I
V
t
t
I
I
I
V
C
I
I
I
V
IRTx
IRTx
T
r(RXD)
f(RXD)
ICH
CC1
CC
CC
RXD
SD
SD
SD
t
t
OH
OH
OL
E
E
E
IH
IN
PW
PW
A
IL
e
e
e
0.8 x V
0.9 x V
V
CC1
- 0.5
- 25
400
Min
2.7
(0.4)
- 2
- 1
300
Min
1.7
20
20
4
- 0.5
CC1
CC1
Vishay Semiconductors
1100
Typ.
550
500
(500)
Typ.
(10)
100
400
2.0
0
5
V
CC1
+ 150
1500
+ 85
Max
900
600
5.5
2.5
0.4
0.5
+ 2
Max
150
(15)
500
TFBS5711
2.9
1
5
1
5
60
60
+ 0.5
www.vishay.com
(mW/cm
(µW/cm
(µW/cm
mW/m
mW/m
kW/m
Unit
Unit
µA
µA
µA
µA
µA
µA
µA
µA
pF
°C
V
V
V
V
V
V
ns
ns
ns
µs
2
233
2
2
2)
2)
2
)

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