BAR8902LRHE6433XT Infineon Technologies, BAR8902LRHE6433XT Datasheet
BAR8902LRHE6433XT
Specifications of BAR8902LRHE6433XT
Related parts for BAR8902LRHE6433XT
BAR8902LRHE6433XT Summary of contents
Page 1
Silicon PIN Diode Optimized for antenna switches in hand held applications Very low capacitance at zero volts reverse bias at frequencies above 1GHz (typ. 0.19 pF) Low forward resistance (typ. 0.8 Very low signal distortion Pb-free (RoHS compliant) package Qualified ...
Page 2
Electrical Characteristics at T Parameter DC Characteristics Breakdown voltage µA (BR) Reverse current Forward voltage 100 25°C, unless otherwise specified A Symbol ...
Page 3
Electrical Characteristics at T Parameter AC Characteristics Diode capacitance MHz 100 MHz GHz ...
Page 4
Diode capacitance Parameter 0.5 pF 0.4 1 MHz 100 MHz 0.35 1 GHz 1.8 GHz 0.3 0.25 0.2 0.15 0 Forward resistance 100MHz ...
Page 5
Forward current BAR89-02LRH 120 mA 100 Permissible Pulse Load Fmax FDC p BAR89-02LRH ...
Page 6
Isolation Parameter R BAR89-02LRH in series configuration - -25 - (f) 4 GHz ...
Page 7
Package Outline Top view 2 1 Cathode marking 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" Copper Marking Layout (Example) Standard Packing Reel ø180 mm = 15.000 Pieces/Reel Reel ø330 ...
Page 8
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...